Sökning: "buffer design"

Visar resultat 6 - 10 av 102 avhandlingar innehållade orden buffer design.

  1. 6. Throughput and Latency of Millimeter-Wave Networks : Performance Analyses and Design Principles

    Författare :Guang Yang; Ming Xiao; Mikael Skoglund; Mehdi Bennis; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Telecommunication; Telekommunikation;

    Sammanfattning : Nowadays, the ever-increasing demands on higher data rates and better serviceperformance have posed extremely huge challenges to the existing wireless communicationswithin sub-6 GHz bands, mainly due to the spectrum scarcity in lowerfrequency bands. In recent years, the millimeter-wave (mm-wave) technology, as apromising candidate to meet the aforementioned demands, have attracted extensiveresearch attention, and has been regarded as one of the key enablers for theforthcoming the 5th generation (5G) mobile communications. LÄS MER

  3. 7. Flip-Chip Interconnect for Millimeter-Wave Packaging Applications

    Författare :Li-Han Hsu; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Underfill; Packaging; V-band; Fabrication; Millimeter-Waves; MMICs; 60 GHz; Multi-Chip Module; Interconnect; Organic laminate; Reliability.; Flip-Chip; Design;

    Sammanfattning : In recent years, with the demands for wireless communication systems increas rapidly, the operating frequency for the portable wireless is moving toward millimeter-waves. Millimeter-wave wireless communication systems require not only suitable functional IC components but also competent package with low cost and good interconnect performance. LÄS MER

  4. 8. Design, Fabrication and Characterization of GaN HEMTs for Power Switching Applications

    Författare :Björn Hult; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; DCIT; SCE; high voltage; isolation; ‘buffer-free’; gate dielectric; GaN HEMT; passivation; DIBL;

    Sammanfattning : The unique properties of the III-nitride heterostructure, consisting of gallium nitride (GaN), aluminium nitride (AlN) and their ternary compounds (e.g. AlGaN, InAlN), allow for the fabrication of high electron mobility transistors (HEMTs). LÄS MER

  5. 9. Energy and Design Cost Efficiency for Streaming Applications on Systems-on-Chip

    Författare :Jun Zhu; Axel Jantsch; Twan Basten; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Streaming applications; Systems-on-chip; Synchronous dataflow; energy efficiency; buffer minimization; performance analysis; Informatics; computer and systems science; Informatik; data- och systemvetenskap;

    Sammanfattning : With the increasing capacity of today's integrated circuits, a number ofheterogeneous  system-on-chip (SoC)  architectures  in embedded  systemshave been proposed. In order to achieve energy and design cost efficientstreaming applications  on these  systems, new design  space explorationframeworks  and  performance  analysis  approaches are  required. LÄS MER

  7. 10. Analysis and Design of Rateless Codes

    Författare :Iqbal Hussain; Lars Kildehøj Rasmussen; Petar Popovski; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : The invention of turbo codes and the re-discovery of sparse graph codes constitute a milestone in error-correction codes designed for communication and storage systems. Sparse graph codes such as low-density parity-check codes can offer a performance that approaches the previously elusive Shannon capacity with reasonable practical computational complexity. LÄS MER