Sökning: "bipolar-transistors"

Visar resultat 1 - 5 av 30 avhandlingar innehållade ordet bipolar-transistors.

  1. 1. SiGeC Heterojunction Bipolar Transistors

    Författare :Erdal Suvar; KTH; []
    Nyckelord :Silicon-Germanium-Carbon SiGeC ; Heterojunction bipolar transistor HBT ; chemical vapor deposition CVD ; selective epitaxy; non-selective epitaxy; collector design; high-frequency measurement; dopant segregation; thermal stability;

    Sammanfattning : Heterojunction bipolar transistors (HBT) based on SiGeC havebeen investigated. Two high-frequency architectures have beendesigned, fabricated and characterized. Different collectordesigns were applied either by using selective epitaxial growthdoped with phosphorous or by non-selective epitaxial growthdoped with arsenic. LÄS MER

  3. 2. DC Parameter Extraction and Modeling of Bipolar Transistors

    Författare :Martin Linder; KTH; []
    Nyckelord :bipolar transistors; papameter extraction; test structure; modeling; distributed model; base resistance; emitter resistance; collector resistance;

    Sammanfattning : .... LÄS MER

  4. 3. Silicon Germanium heterojunction bipolar transistors : Large-signal modeling and low-frequency noise characterization aspects

    Författare :Staffan Bruce; Uppsala universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Materials science; Silicon Germanium; SiGe; Heterojunction Bipolar Transistor; HBT; Large-signal modeling; thermal time constant; low-frequency noise: coherence; transimpedance amplifier; Materialvetenskap; Materials science; Teknisk materialvetenskap; Elektronik; Electronics;

    Sammanfattning : In this thesis, aspects of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) are addressed. A physics-based electrical large-signal model including thermal dependence has been developed and is implemented using a commercially available simulator package. LÄS MER

  5. 4. Ultra High Speed InP Heterojunction Bipolar Transistors

    Författare :Mattias Dahlström; KTH; []
    Nyckelord :InP HBT carbon high-speed;

    Sammanfattning : This thesis deals with the development of high speed InPmesa HBT’s with power gain cut—off frequencies up toand above 300 GHz, with high current density and low collectordischarging times.Key developments are Pd—based base ohmics yielding basecontact resistances as low as 10 Ωµm2, base—collector grades to enable to use ofInP in the collector, and an increase in the maximum currentdensity through collector design and thermal optimization. LÄS MER

  7. 5. Electrical characterization of high-frequency silicon bipolar transistors

    Författare :Martin Sandén; KTH; []
    Nyckelord :;

    Sammanfattning : .... LÄS MER