Sökning: "atomic layer deposition"

Visar resultat 1 - 5 av 113 avhandlingar innehållade orden atomic layer deposition.

  1. 1. Atomic layer epitaxy of copper

    Författare :Per Mårtensson; Uppsala universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Chemistry; Atomic Layer Epitaxy; ALE; copper; ab initio calculations; DFT; CuCl; Cu thd 2; selectivity; Kemi; Chemistry; Kemi; Inorganic Chemistry; oorganisk kemi;

    Sammanfattning : The high electric and thermal conductivity of copper has made it to a prime candidate as interconnect material in future integrated circuits. In this thesis, Atomic Layer Epitaxy has been used to deposit thin copper films on a variety of substrates, using both CuCl and Cu(II)2,2,6,6-tetramethyl-3,5-heptanedionate, Cu(thd)2, as precursors and hydrogen as reducing agent. LÄS MER

  2. 2. Atomic Layer Deposition of Copper, Copper(I) Oxide and Copper(I) Nitride on Oxide Substrates

    Författare :Tobias Törndahl; Jan-Otto Carlsson; Karin Larsson; Mikael Ottosson; Lauri Niinistö; Uppsala universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Inorganic chemistry; Atomic Layer Deposition; ALD; copper; copper I oxide; copper I nitride; deposition pathway; CuCl; Cu hfac 2; oxide substrates; epitaxy; DFT; ab-initio; Oorganisk kemi; Inorganic chemistry; Oorganisk kemi;

    Sammanfattning : Thin films play an important role in science and technology today. By combining different materials, properties for specific applications can be optimised. LÄS MER

  3. 3. Model-based Analysis and Design of Atomic Layer Deposition Processes

    Författare :Anders Holmqvist; Avdelningen för kemiteknik; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Atomic layer deposition; Heterogeneous reaction kinetics; Limit-cycle dynamics; Parameter estimation; Multi-objective optimization; Dynamic optimization; Scale-up analysis;

    Sammanfattning : Atomic layer deposition (ALD) is a thin-film manufacturing process in which the growth surface is exposed to non-overlapping alternating injections of gas-phase chemical precursor species separated by intermediate purge periods to prevent gas-phase reactions. ALD is characterized by sequential self-terminating heterogeneous reactions between highly reactive gas-phase precursor species and surface-bound species which, when allowed sufficient conditions to reach saturation, results in highly conformal films, on both planar and topographically complex structures. LÄS MER

  4. 4. A Study of Group 13-Nitride Atomic Layer Deposition : Computational Chemistry Modelling of Atomistic Deposition Processes

    Författare :Karl Rönnby; Lars Ojamäe; Henrik Pedersen; Simon Elliott; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : The crystalline solids aluminium nitride (AlN), gallium nitride (GaN) and indium nitride (InN), together with their alloys, are of huge interest in the semiconductor industry. Their bandgaps span an extensive range from 6.0 eV for AlN to 0.7 eV for InN, with GaN in between at a bandgap of 3. LÄS MER

  5. 5. Atomic Layer Deposition and Immobilised Molecular Catalysts Studied by In and Ex Situ Electron Spectroscopy

    Författare :Payam Shayesteh; NanoLund: Centre for Nanoscience; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; Ambient pressure XPS; Catalysis; Heterogenisation; Atomic layer deposition; HfO2; Gas phase; TDMAHf; TDMAT; Fysicumarkivet A:2019:Shayesteh;

    Sammanfattning : The research work that I describe in my thesis deals with three different heterogenisation approaches for synthesising a heterogeneous transition metal catalyst used for direct C-H activation reactions. The three heterogenisation approaches considered in my research are: (1) heterogenisation of a molecular catalyst on a polymer support using covalent bonds, (2) heterogenisation of a catalyst on a reduced graphene oxide (rGO) support using non-covalent interactions and (3) immobilisation of a catalyst on an inorganic surface using covalent bonds and encapsulation in an inorganic matrix. LÄS MER