Sökning: "arsenide InAs"

Visar resultat 1 - 5 av 9 avhandlingar innehållade orden arsenide InAs.

1. 1. Vertical III-V/High-k Nanowire MOS Capacitors and Transistors

   Författare :Jun Wu; Institutionen för elektro- och informationsteknik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; MOS capacitor; C-V; XPS; MOVPE; InGaAs; InAs; High-k; RF; Track-and-hold circuit;

   Sammanfattning : The emerging nanowire technology in recent years has attracted an increasing interest for high-speed, low-power electronics due to the possibility of a gate-all-around (GAA) geometry enabling aggressive gate length scaling, together with the ease in incorporating high-mobility narrow band gap III-V semiconductors such as InAs on Si substrates. These benefits make vertical nanowire transistors an attractive alternative to the planar devices. LÄS MER

3. 2. III-V Devices for Emerging Electronic Applications

   Författare :Patrik Olausson; NanoLund: Centre for Nanoscience; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Cryogenic; Hall; III-V; InAs; InGaAs; Josephson junction; Magnetoresistance; MOSFET; Nanowire; Quantum well; Superconductivity; Template-assisted selective epitaxy; Cryogenic; Hall; III-V; InAs; InGaAs; Josephson junction; Magnetoresistance; MOSFET; Nanowire; Quantum well; Superconductivity; Template-assisted selective epitaxy;

   Sammanfattning : Today’s digitalized society relies on the advancement of silicon (Si) Complementary Metal Oxide Semiconductor (CMOS) technology, but the limitations of down-scaling and the rapidly increasing demand for added functionality that is not easily achieved in Si, have pushed efforts to monolithically 3D-integrate III-V devices above the Si-CMOS technology. In addition, the demand for increased computational power and handling of vast amounts of data is rapidly increasing. LÄS MER

4. 3. Nanowire Transistors and RF Circuits for Low-Power Applications

   Författare :Karl-Magnus Persson; Institutionen för elektro- och informationsteknik; []
   Nyckelord :InAs; Nanowire; Metal-oxide-semiconductor field-effect transistor; MOSFET; RF; Mixer; Circuit; 1 f-noise; Simulation; Modelling;

   Sammanfattning : The background of this thesis is related to the steadily increasing demand of higher bandwidth and lower power consumption for transmitting data. The work aims at demonstrating how new types of structures, at the nanoscale, combined with what is referred to as exotic materials, can help benefit in electronics by lowering the consumed power, possibly by an order of magnitude, compared to the industry standard, silicon (Si), used today. LÄS MER

5. 4. Technology and studies of electron transport in InAs nanowire junctions

   Författare :Dmitry Suyatin; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

   Sammanfattning : The topic of this thesis is technology and experimental studies of electron transport in Indium Arsenide (InAs) nanowires and InAs nanowire junctions. The aim of this work has been fabrication of nanoelectronic devices which have possibilities for future nanoelectronics. LÄS MER

7. 5. Studies of Novel Nanostructures by Cross- sectional Scanning Tunneling Microscopy

   Författare :Lassana Ouattara; Synkrotronljusfysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Dilute ferromagnetic semiconductors Superlattices; Cross-sectional scanning tunneling microscopy; Semiconductor nanostructures; Fysik; Physics; Epitaxy; Quantum dots; Nanowires;

   Sammanfattning : This thesis presents structural and morphological studies of semiconductor nanostructures, namely quantum dots, nanowires and a dilute ferromagnetic semiconductor. These nanostructures are investigated on the atomic scale using cross-sectional scanning tunneling microscopy (XSTM). LÄS MER