Sökning: "applied superconductivity"
Visar resultat 11 - 15 av 24 avhandlingar innehållade orden applied superconductivity.
11. Theoretical Studies of Magnetism and Electron Correlation in Solids
Sammanfattning : This work presents new development and applications of ab-initio simulation tools for material science. Focus lies on materials with strong electronic correlation and strong spin-orbit coupling. LÄS MER
12. Nanomechanical Phenomena in Low-Dimensional Structures
Sammanfattning : This is a compilation thesis which investigates various mechanical phenomena in different low-dimensional nanoscale systems. In the first part, we consider a purely mechanical phenomenon: the sensitivity of the dispersion of a Love-type surface acoustic wave (SAW) to geometry and material parameters. LÄS MER
13. From Macroscopic to Microscopic Dynamics of Superconducting Cavities
Sammanfattning : Superconducting (SC) radio frequency (RF) cavities are at the heart of many large-scale particle accelerators such as the European Spallation Source (ESS), the X-ray Free Electron Laser (XFEL), the Linac Coherent Light Source (LCLS)-II and the proposed International Linear Collider (ILC). The SC cavities are essentially resonant structures with very high intrinsic quality factors (Q0) of the order of 1010. LÄS MER
14. Photoelectron Spectroscopy of Cuprates and Manganites
Sammanfattning : Abstract In this thesis, the high temperature superconductors (HTSC) La2CuO4+x and Bi2Sr2CaCu2O8+d and the colossal magnetoresistive (CMR) La1-xSrxMnO3 have been studied by photoelectron spectroscopy. Techniques such as angular resolved photoemission (ARPES), resonant photoemission spectroscopy (RESPES) and x-ray absorption spectroscopy have been applied, using synchrotron radiation. LÄS MER
15. III-V Devices for Emerging Electronic Applications
Sammanfattning : Today’s digitalized society relies on the advancement of silicon (Si) Complementary Metal Oxide Semiconductor (CMOS) technology, but the limitations of down-scaling and the rapidly increasing demand for added functionality that is not easily achieved in Si, have pushed efforts to monolithically 3D-integrate III-V devices above the Si-CMOS technology. In addition, the demand for increased computational power and handling of vast amounts of data is rapidly increasing. LÄS MER