Sökning: "X-ray photoelectron spectroscopy XPS lund"

Hittade 5 avhandlingar innehållade orden X-ray photoelectron spectroscopy XPS lund.

1. 1. Model catalysts studied by x-rays, visible and infrared light

   Författare :Stefano Albertin; Synkrotronljusfysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; High Energy Surface X-ray Diffraction; X-ray Photoelectron Spectroscopy; oxidation; Pd 100 ; PdO; Ir 100 ; IrO2; in-situ; operando; Surface Optical Reflectance;

   Sammanfattning : This work is focused on the study of transition metal model catalysts for gas-phase heterogeneous catalysis, studied with light-based in-situ and operando techniques.Metallic model catalysts, such as Palladium (Pd) and Iridium (Ir) single crystals and in minor part deposited Rhodium (Rh), were studied using a combination of x-ray and non x-ray techniques. LÄS MER

3. 2. III–V Nanowire Surfaces

   Författare :Martin Hjort; NanoLund: Centre for Nanoscience; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; low energy electron microscopy; scanning tunneling spectroscopy; scanning tunneling microscopy; surface; III–V semiconductor materials; nanowire; photoemission electron microscopy; photoelectron spectroscopy; Fysicumarkivet A:2014:Hjort;

   Sammanfattning : This dissertation deals with the geometric and electronic structure of surfaces on III–V semiconductor nanowires (NWs). NWs made of InAs, GaAs, and InP have been studied using scanning tunneling microscopy/spectroscopy (STM/S), low energy electron microscopy (LEEM), photoemission electron microscopy (PEEM), and x-ray photoelectron spectroscopy (XPS). LÄS MER

4. 3. Vertical III-V/High-k Nanowire MOS Capacitors and Transistors

   Författare :Jun Wu; Institutionen för elektro- och informationsteknik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; MOS capacitor; C-V; XPS; MOVPE; InGaAs; InAs; High-k; RF; Track-and-hold circuit;

   Sammanfattning : The emerging nanowire technology in recent years has attracted an increasing interest for high-speed, low-power electronics due to the possibility of a gate-all-around (GAA) geometry enabling aggressive gate length scaling, together with the ease in incorporating high-mobility narrow band gap III-V semiconductors such as InAs on Si substrates. These benefits make vertical nanowire transistors an attractive alternative to the planar devices. LÄS MER

5. 4. Growth and Characterization of ZnO Nanocrystals

   Författare :Leif KE Ericsson; Kjell O Magnusson; Lars SO Johansson; Hanmin M Zhang; Omer Nour; Karlstads universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; ZnO; Nanocrystals; Surface physics; XPS; SEM; AES; AFM; STM; Physics; Fysik;

   Sammanfattning : The understanding of surfaces of materials is of crucial importance to all of us. Considering nanocrystals (NCs), that have a large surface to bulk ratio, the surfaces become even more important. Therefore, it is important to understand the fundamental surface properties in order to use NCs efficiently in applications. LÄS MER

7. 5. Atomic Scale Characterization of III-V Nanowire Surfaces

   Författare :Johan Knutsson; NanoLund: Centre for Nanoscience; []
   Nyckelord :III–V semiconductor materials; nanowire; surface; scanning tunneling microscopy; wurtzite; zinc blende; scanning tunneling spectroscopy; Fysicumarkivet A:2017:Knutsson;

   Sammanfattning : This dissertation focus on the atomic-scale characterization of the surface properties and electronic structure of III–V semiconductor nanowires (NWs). Since the early 2000s, the fabrication and characterization of III–V NWs has been a very significant topic within material science due to their potential for applications in lighting, energy harvesting, and electronics. LÄS MER