Sökning: "Wei-xin Ni"

Hittade 5 avhandlingar innehållade orden Wei-xin Ni.

  1. 1. Optical characterization of Silicon-based self-assembled nanostructures

    Författare :Bouchaib Adnane; Wei-Xin Ni; Per Olof Holtz; Göran Hansson; Susumo Fukatsu; Linköpings universitet; []

    Sammanfattning : This PhD thesis summarizes the work carried on the optical characterizations of some Si-based self-assembled nanostructures, particularly SiGe/Si quantum dots (QDs) and nanocrystalline (nc)-Si embedded in mesoporous silica (MS) using photoconductivity (PC), photoluminescence (PL), and photoluminescence excitation (PLE) measurements. The spectroscopic studies of SiGe/Si QDs grown on Si by molecular beam epitaxy revealed for the first time well-resolved PLE resonances. LÄS MER

  2. 2. Near-infrared photodetectors based on Si/SiGe nanostructures

    Författare :Anders Elfving; Wei-Xin Ni; Thomas P. Pearsall; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; SiGe; Ge dots; nanostructures; molecular beam epitaxy; photodetector; Semiconductor physics; Halvledarfysik;

    Sammanfattning : Two types of photodetectors containing Ge/Si quantum dots have been fabricated based on materials grown by molecular beam epitaxy and characterized with several experimental techniques. The aim was to study new device architectures with the implementation of Ge nanostructures, in order to obtain high detection efficiency in the near infrared range at room temperature. LÄS MER

  3. 3. Si-based structures for light emission and detection

    Författare :Amir Karim; Göran Hansson; Wei-Xin Ni; Tom Gregorkiewicz; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Physics; Fysik;

    Sammanfattning : Efforts to improve the optical performance of the indirect bandgap semiconductor silicon (Si) has been a major subject of research in the field of Si photonics due to the promising applications of Si based light emitters and detectors for optical communication. With that motivation three different Si based material systems were investigated; Si:Er/O layered structures, SiGe quantum dots and SiSn nano structures, all grown using the technique of molecular beam epitaxy (MBE). LÄS MER

  4. 4. Materials and Processing Technologies for Advanced Electronic and Photonic Devices

    Författare :Zhenzhong Zhang; Mattias Hammar; Wei-Xin Ni; KTH; []
    Nyckelord :;

    Sammanfattning : .... LÄS MER

  5. 5. Growth and Characterization of Strain-engineered Si/SiGe Heterostructures Prepared by Molecular Beam Epitaxy

    Författare :Ming Zhao; Wei-Xin Ni; Göran Hansson; Kang L. Wang; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Si SiGe; Strain engineering; Molecular beam epitaxy; THz; Quantum cascade; Strain relaxation; Materials science; Teknisk materialvetenskap;

    Sammanfattning : The strain introduced by lattice mismatch is a built-in characteristic in Si/SiGe heterostructures, which has significant influences on various material properties. Proper design and precise control of strain within Si/SiGe heterostructures, i.e. LÄS MER