Sökning: "Vertical Cavity Surface Emitting Lasers VCSELs"

Visar resultat 16 - 20 av 34 avhandlingar innehållade orden Vertical Cavity Surface Emitting Lasers VCSELs.

  1. 16. Optical Guiding and Feedback Structures in GaN-Based Vertical-Cavity Surface-Emitting Lasers

    Författare :Seyed Ehsan Hashemi; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : The Vertical-Cavity Surface-Emitting Laser (VCSEL) made from GaAs-based materials is an established infrared light source, and is produced in large volumes for short-distance optical links, computer mice, and thermal processing systems. A wide range of applications, such as high-resolution printing, general lighting, and biomedical diagnosis and treatment could benefit from using a VCSEL with blue or ultraviolet emission. LÄS MER

  3. 17. Modulation Properties of Vertical Cavity Light Emitters

    Författare :Renaud Stevens; KTH; []
    Nyckelord :Semiconductor lasers; VCSEL; high-speed modulation; fibre optic networks; datacom; RCLED; plastic optical fibre;

    Sammanfattning : It is estimated that, between the year 2000 and 2003, thenumber of online Internet users will grow from 250 millions to500 millions. This growth results in rapidly increasing demandfor fibre-optic communication bandwidth, occurring at alllevels: from access and local area networks (LANs) tometro-area networks (MANs). LÄS MER

  4. 18. Gallium arsenide based buried heterostructure laser diodes with aluminium-free semi-insulating materials regrowth

    Författare :Carlos Angulo Barrios; KTH; []
    Nyckelord :semiconductor lasers; in-plane lasers; VCSELs; GaAs; GaInP; semi-insulating materials; hydride vapour phase epitaxy; regrowth; buried heterostructure; leakage current; simulation;

    Sammanfattning : Semiconductor lasers based on gallium arsenide and relatedmaterials are widely used in applications such as opticalcommunication systems, sensing, compact disc players, distancemeasurement, etc. The performance of these lasers can beimproved using a buried heterostructure offering lateralcarrier and optical confinement. LÄS MER

  5. 19. Epitaxial growth optimization for 1.3-um InGaAs/GaAs Vertical-Cavity Surface-Emitting lasers

    Författare :Zhenzhong Zhang; Mattias Hammar; Nicolae Chitica; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; VCSEL MOVPE InGaAs GaAs quantum wells; Semiconductor physics; Halvledarfysik;

    Sammanfattning : Long-wavelength (1.3-μm) vertical-cavity surface-emitting lasers (VCSELs) are of great interest as low-cost, high performance light sources for fiber-optic metro and access networks. During recent years the main development effort in this field has been directed towards all epitaxial GaAs-based structures by employing novel active materials. LÄS MER

  7. 20. Long-wavelength vertical-cavity lasers based on InP/GaInAsp bragg reflectors

    Författare :Stefan Rapp; KTH; []
    Nyckelord :;

    Sammanfattning : Vertical-cavity surface-emitting lasers (VCSELs) operatingat long wavelength (1.3-1.55µm) are of great interest asinexpensive, high-performance light sources for opticalcommunication systems. LÄS MER