Sökning: "Tunneling transistors"

Visar resultat 1 - 5 av 42 avhandlingar innehållade orden Tunneling transistors.

  1. 1. Graphene Hot-electron Transistors

    Författare :Sam Vaziri; Mikael Östling; Max Lemme; Suman Datta; KTH; []
    Nyckelord :Graphene; hot-electron transistors; graphene base transistors; GBT; cross-plane carrier transport; tunneling; ballistic transport; heterojunction transistors; graphene integration; graphene transfer; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : Graphene base transistors (GBTs) have been, recently, proposed to overcome the intrinsic limitations of the graphene field effect transistors (GFETs) and exploit the graphene unique properties in high frequency (HF) applications. These devices utilize single layer graphene as the base material in the vertical hot-electron transistors. LÄS MER

  3. 2. Tunnel Emitter Transistors

    Författare :Erik Aderstedt; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TET; tunneling; siO2< sub>; tunnel emitter transistor; MOS; Ta2< sub>O5< sub>; silicon; high- #954; BICFET; dielectrics;

    Sammanfattning : The Tunnel Emitter Transistor is based on the modulation of the tunnel current in a Metal Oxide Semiconductor (MOS) structure with an ultra-thin oxide layer. The modulation is accomplished by injecting charge to the oxide-semiconductor interface from a third terminal. LÄS MER

  4. 3. Resonant Tunneling in Laterally Confined Quantum Structures

    Författare :Boel Gustafson; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; gravitation; relativity; quantum mechanics; classical mechanics; Mathematical and general theoretical physics; Fysik; Physics; High peak-to-valley ratio; Lateral confinement; Quantum dots; Resonant tunneling; Self-assembled quantum dots; Schottky depletion; Buried metal gate; Electron transport; Magnetic-field dependence; Energy level width; Tunneling transistors; Mode coupling; statistical physics; thermodynamics; Matematisk och allmän teoretisk fysik; klassisk mekanik; kvantmekanik; relativitet; statistisk fysik; termodynamik; Technological sciences; Teknik; Fysicumarkivet A:2001:Gustafson;

    Sammanfattning : In the thesis, three-dimensionally confined resonant tunneling structures were studied experimentally. Two approaches were used for obtaining quantum confinement: gate-defined lateral constriction of double barrier structures, and epitaxial growth of self-assembled quantum dots. LÄS MER

  5. 4. Tunneling Based Electronic Devices

    Författare :Erik Lind; Institutionen för elektro- och informationsteknik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiGe; Esaki Diodes; classical mechanics; quantum mechanics; relativity; termodynamik; relativitet; kvantmekanik; statistisk fysik; Matematisk och allmän teoretisk fysik; thermodynamics; gravitation; statistical physics; GaAs; Mathematical and general theoretical physics; Resonant Tunneling Permeable Base Transistors; Resonant Tunneling Diodes; klassisk mekanik; Fysicumarkivet A:2004:Lind;

    Sammanfattning : This thesis concerns different kinds of tunneling based devices all showing negative differential resistance. The thesis is divided in three parts, resonant tunneling transistors, Esaki diodes and coupled zero dimensional systems. LÄS MER

  7. 5. Spin Transport Studies of Nanoscaled Ferromagnetic Tunneling Devices

    Författare :Ruisheng Liu; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; tunneling anisotropic magnetoresistance.; tunneling magnetoresistance; ferromagnetic single electron transistor; spin relaxation; Spin transport;

    Sammanfattning : This thesis presents spin transport studies of ferromagnetic nano-scaled tunneling devices fabricated by atomic force microscopy (AFM) and electron beam lithography (EBL). The thesis covers three main topics: The first topic is a study of spin accumulation (relaxation) in Au nano-structures using Ni/Au/Ni ferromagnetic single electron transistors (F-SETs). LÄS MER