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  1. 1. Epitaxial Graphene Technology for Quantum Metrology

    Författare :Thomas Yager; [2015]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; charge neutrality; optical microscopy; Epitaxial graphene; resistance metrology; silicon carbide; quantum Hall effect; electron transport; bilayer graphene;

    Sammanfattning : Graphene grown on silicon carbide by high-temperature annealing (SiC/G) is a strong contender in the race towards large-scale graphene electronics applications. The unique electronic properties of this system lead to a remarkably robust and accurate Hall resistance quantisation of 0. LÄS MER