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1. Low and High Energy Ion Beams in Nanotechnology
Sammanfattning : In this thesis, two ways of fabrication of nanometer-sized semiconductor features are presented. Low Energy Ion Implantation (LEII) has been used to create shallow (sub-50 nm) and laterally small (5 m m – 200 nm) features by 10 keV As+ doping of B background doped Si. LÄS MER
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