Sökning: "Thermal Diode"
Visar resultat 21 - 25 av 44 avhandlingar innehållade orden Thermal Diode.
21. Modelling and Characterisation of Terahertz Planar Schottky Diodes
Sammanfattning : This thesis deals with the modelling and characterisation of THz planar Schottky diodes, focusing on analyses of geometry-dependent electrical parasitics and the thermal management of the diode chip. Moving towards higher operating frequencies, the diode performance degrades due to high frequency losses, parasitic couplings and self-heating effects. LÄS MER
22. Novel materials for Yb and Er-Yb doped microchip lasers
Sammanfattning : The objective of this thesis has been to investigate novel host material configurations for high-power end-pumped Er-Yb co-doped, or Yb doped microchip lasers and try to increase their performance. In Er-Yb co-doped systems, the main limitation is the thermal shortcomings of the phosphate glass host material. LÄS MER
23. Silicon Integrated HBV Frequency Multipliers for THz Applications
Sammanfattning : This thesis deals with integrated varactor diode circuits for terahertz (THz) applications. In particular hybrid, monolithic microwave integrated circuits (MMICs), and heterogeneous integration are explored for frequency multiplier applications. LÄS MER
24. Development of infrared spectroscopy techniques for environmental monitoring
Sammanfattning : Infrared spectroscopy techniques have long been utilized in identifying and quantifying species of interest to us. Many of the elementary molecules in the atmosphere interact with infrared radiation through their ability to absorb and emit energy in vibrational and rotational transitions. LÄS MER
25. Fabrication of Integrated HBV Multipliers for THz Generation
Sammanfattning : The main objective of this licentiate thesis is to demonstrate silicon integrated HBV frequency multipliers for THz generation with RF performance comparable with InP technology. The choice of silicon is motivatedby better thermal and mechanical properties, cost and ease of integration compared to III-V semiconductor substrates. LÄS MER