Sökning: "Silicon carbide"

Visar resultat 21 - 25 av 164 avhandlingar innehållade orden Silicon carbide.

  1. 21. Silicon Carbide High Temperature Photodetectors and Image Sensor

    Författare :Shuoben Hou; Mikael Östling; Carl-Mikael Zetterling; Per-Erik Hellström; Anthony O'Neill; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide SiC ; high temperature; photodetector; photodiode; phototransistor; ultraviolet UV ; transistor-transistor logic TTL ; bipolar junction transistor BJT ; integrated circuit IC ; pixel sensor; image sensor; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : Silicon Carbide (SiC) has the advantages of ultraviolet (UV) sensing and high temperature characteristics because of its wide band gap. Both merits make SiC photodetectors very attractive in astronomy, oil drilling, combustion detection, biology and medical applications. LÄS MER

  3. 22. Silicon Carbide BipolarTechnology for High Temperature Integrated Circuits

    Författare :Luigia Lanni; Zetterling Carl-Mikael; Sei-Hyung Ryu; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide SiC ; bipolar junction transistor BJT ; current gain; surface passivation; SiC etching; complementary bipolar; lateral PNP; Darlington transistors; SPICE modeling; high-temperature; integrated circuits; emitter coupled logic ECL ;

    Sammanfattning : The availability of integrated circuits (ICs) capable of 500 or 600° C operation can be extremely beneficial for many important applications, such as transportation and energy sector industry. It can in fact enable the realization of improved sensing and control of turbine engine combustion leading to better fuel efficiency and reduced pollution. LÄS MER

  4. 23. Design and Fabrication of Silicon Carbide RF MOSFET

    Författare :Gudjon Gudjonsson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 4H-SiC; Metal-Oxide-Semiconductor Field-Effect-Transistor MOSFET ; Silicon Carbide SiC ;

    Sammanfattning : .... LÄS MER

  5. 24. High power bipolar junction transistors in silicon carbide

    Författare :Hyung-Seok Lee; Carl-Mikael Zetterling; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide SiC ; power device; biplar junction transistor; TiW; ohmic contact; current gain; Electronics; Elektronik;

    Sammanfattning : As a power device material, SiC has gained remarkable attention to its high thermal conductivity and high breakdown electric field. SiC bipolar junction transistors (BJTs) are interesting for applications as power switch for 600 V-1200 V applications. LÄS MER

  7. 25. Silicon Carbide Sigma-Delta Modulatorfor High Temperature Applications

    Författare :Ye Tian; Carl-Mikael Zetterling; Ana Rusu; Jerzy Dabrowski; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide SiC ; bipolar; sigma-delta; data conversion; OpAmp; integrated circuit IC ; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : .... LÄS MER