Sökning: "Silicon carbide"

Visar resultat 11 - 15 av 164 avhandlingar innehållade orden Silicon carbide.

  1. 11. Gate Control and System Aspects of Silicon Carbide JFETs

    Författare :Björn Ållebrand; KTH; []
    Nyckelord :Power JFET; Silicon Carbide; PSpice; Simulations; Gate drive; Blanking times; Normally-on.;

    Sammanfattning : .... LÄS MER

  3. 12. Stacking Faults in Silicon Carbide

    Författare :Hisaomi Iwata; Friedhelm Bechstedt; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : This PhD thesis comprises a series of theoretical studies on various stacking faults in silicon carbide polytypes, based on first-principles density functional modelling, which lead to a detailed insight into general electronic properties of stacking disordered system. This work is largely motivated by the discovery in 1999 by ABB Corporate Research of the electronic degradation phenomenon in 4H-SiC p-i-n diodes. LÄS MER

  4. 13. Chloride-based Silicon Carbide CVD

    Författare :Henrik Pedersen; Erik Janzén; Anne Henry; Yaroslav Koshka; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Chemistry; Kemi;

    Sammanfattning : Silicon carbide (SiC) is a promising material for high power and high frequency devices due to its wide bandgap, high break down field and high thermal conductivity. The most established technique for growth ofepitaxial layers of SiC is chemical vapor deposition (CVD) at around 1550 °C using silane, SiH4, and lighthydrocarbons e g propane, C3H8, or ethylene, C2H4, as precursors heavily diluted in hydrogen. LÄS MER

  5. 14. Simulation and Characterization of Silicon Carbide Power Bipolar Junction Transistors

    Författare :Benedetto Buono; Mikael Östling; Gunnar Malm; Martin Domeij; Lothar Frey; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide; power device; BJT; diode; simulation; characterization; current gain; on-resistance; breakdown voltage; forward voltage drop; degradation; SRA - ICT; SRA - Informations- och kommunikationsteknik;

    Sammanfattning : The superior characteristics of silicon carbide, compared with silicon, have suggested considering this material for the next generation of power semiconductor devices. Among the different power switches, the bipolar junction transistor (BJT) can provide a very low forward voltage drop, a high current capability and a fast switching speed. LÄS MER

  7. 15. Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors

    Författare :Hyung-Seok Lee; Carl-Mikael Zetterling; Tat-Sing Chow; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide; power device; BJT; current gain; specific on resistance RSP_ON ; breakdown voltage; forward voltage drop; surface recombination; ohmic contact.; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik;

    Sammanfattning : Silicon carbide bipolar junction transistors (BJTs) are attractive power switching devices because of the unique material properties of SiC with high breakdown electric field, high thermal conductivity and high saturated drift velocity of electrons. The SiC BJT has potential for very low specific on-resistances and this together with high temperature operation makes it very suitable for applications with high power densities. LÄS MER