Sökning: "Silicon carbide SiC"

Visar resultat 11 - 15 av 135 avhandlingar innehållade orden Silicon carbide SiC.

  1. 11. Silicon Carbide High Temperature Photodetectors and Image Sensor

    Författare :Shuoben Hou; Mikael Östling; Carl-Mikael Zetterling; Per-Erik Hellström; Anthony O'Neill; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide SiC ; high temperature; photodetector; photodiode; phototransistor; ultraviolet UV ; transistor-transistor logic TTL ; bipolar junction transistor BJT ; integrated circuit IC ; pixel sensor; image sensor; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : Silicon Carbide (SiC) has the advantages of ultraviolet (UV) sensing and high temperature characteristics because of its wide band gap. Both merits make SiC photodetectors very attractive in astronomy, oil drilling, combustion detection, biology and medical applications. LÄS MER

  3. 12. High power bipolar junction transistors in silicon carbide

    Författare :Hyung-Seok Lee; Carl-Mikael Zetterling; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide SiC ; power device; biplar junction transistor; TiW; ohmic contact; current gain; Electronics; Elektronik;

    Sammanfattning : As a power device material, SiC has gained remarkable attention to its high thermal conductivity and high breakdown electric field. SiC bipolar junction transistors (BJTs) are interesting for applications as power switch for 600 V-1200 V applications. LÄS MER

  4. 13. Thermally stable electrical contacts to 6H silicon carbide

    Författare :Nils Lundberg; Mikael Östling; Claude Jaussaud; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; I-V current -voltage ; C-V capacitance-voltage ; rectifying; ohmic; interface; silicide; carbide; epilayer; Schottky barrier height; current rectification ratio CRR ; specific contact resistivity; transmission line model TLM ; contact resistance; transfer length; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : Silicon Carbide (SiC) are at present being developed for use in high temperature (≥ 500◦C) and high-power environments under which conventional semiconductors can hardly perform.  Thermally stable electrical contacts are essential to the ability of SiC to function under such extreme conditions. LÄS MER

  5. 14. Silicon Carbide Sigma-Delta Modulatorfor High Temperature Applications

    Författare :Ye Tian; Carl-Mikael Zetterling; Ana Rusu; Jerzy Dabrowski; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide SiC ; bipolar; sigma-delta; data conversion; OpAmp; integrated circuit IC ; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : .... LÄS MER

  7. 15. Design and Fabrication of Silicon Carbide RF MOSFET for L- and S-band applications

    Författare :Gudjon Gudjonsson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; Metal-Oxide-Semiconductor Field-Effect-Transistor MOSFET ; 4H-SiC; Silicon Carbide SiC ;

    Sammanfattning : This thesis describes realisation of 4H-SiC radio-frequency metal-oxide-semiconductor field effect transistors (RF MOSFETs). Such transistors are in principle very attractive devices for high power and high frequency electronics. They are intended as a direct replacement for their silicon counterparts, offering higher power. LÄS MER