Sökning: "Silicon carbide SiC"
Visar resultat 1 - 5 av 133 avhandlingar innehållade orden Silicon carbide SiC.
1. Ultrahigh-Voltage Silicon Carbide Device Performance, Requirements, and Limitations in High-Power Applications
Sammanfattning : The increased awareness of the on-going climate change accelerates the electric energy system transformation from fossil-fueled power sources towards systems with larger portions of renewable energy sources. Moreover, the grid infrastructure requires reinforcements to cope with increasing electrical energy demand. LÄS MER
Sammanfattning : This work deals with silicon carbide (SiC) microwave devices. It treats two devices; the Schottky diode and the metal semiconductor field effect transistor (MESFET). Different MESFET materials, fabrication processes, theoretical models for physical simulation, and device models are presented. LÄS MER
Sammanfattning : Silicon carbide rectifiers are commercially available since 2001, and MESFET switches are expected to enter the market within a year. Moreover, three inch SiC wafers can be purchased nowadays without critical defects for the device performance and four inch substrate wafers are announced for the year 2005. LÄS MER
Sammanfattning : The availability of integrated circuits (ICs) capable of 500 or 600° C operation can be extremely beneficial for many important applications, such as transportation and energy sector industry. It can in fact enable the realization of improved sensing and control of turbine engine combustion leading to better fuel efficiency and reduced pollution. LÄS MER
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