Sökning: "Silicon carbide SiC"

Visar resultat 1 - 5 av 133 avhandlingar innehållade orden Silicon carbide SiC.

  1. 1. Ultrahigh-Voltage Silicon Carbide Device Performance, Requirements, and Limitations in High-Power Applications

    Författare :Daniel Johannesson; Hans-Peter Nee; Staffan Norrga; Muhammad Nawaz; Alberto Castellazzi; KTH; []
    Nyckelord :ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 4H-SiC; Current Filamentation; Device Characterization; Dynamic Avalanche; JTE Structure; Junction Termination Extension Design; SiC BJT; SiC GTO Thyristor; SiC IGBT; SiC MOSFET; SiC PiN Diode; Silicon Carbide; TCAD Simulation; Wide bandgap device; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : The increased awareness of the on-going climate change accelerates the electric energy system transformation from fossil-fueled power sources towards systems with larger portions of renewable energy sources. Moreover, the grid infrastructure requires reinforcements to cope with increasing electrical energy demand. LÄS MER

  2. 2. Silicon Carbide Microwave Devices

    Författare :Joakim Eriksson; Chalmers University of Technology; []
    Nyckelord :SBD; high-power microwave devices; Silicon Carbide; diode mixer; wide band gap devices; physical simulations; resistive mixer; microwave devices; MESFET; Schottky diode;

    Sammanfattning : This work deals with silicon carbide (SiC) microwave devices. It treats two devices; the Schottky diode and the metal semiconductor field effect transistor (MESFET). Different MESFET materials, fabrication processes, theoretical models for physical simulation, and device models are presented. LÄS MER

  3. 3. Termination and passivation of Silicon Carbide Devices

    Författare :Maciej Wolborski; Anders Hallén; Jan Szmidt; KTH; []
    Nyckelord :NATURAL SCIENCES; NATURVETENSKAP; NATURVETENSKAP; NATURAL SCIENCES; Silicon Carbide; SiC; passivation; dielectric materials; Semiconductor physics; Halvledarfysik;

    Sammanfattning : Silicon carbide rectifiers are commercially available since 2001, and MESFET switches are expected to enter the market within a year. Moreover, three inch SiC wafers can be purchased nowadays without critical defects for the device performance and four inch substrate wafers are announced for the year 2005. LÄS MER

  4. 4. Silicon Carbide BipolarTechnology for High Temperature Integrated Circuits

    Författare :Luigia Lanni; Zetterling Carl-Mikael; Sei-Hyung Ryu; KTH; []
    Nyckelord :ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide SiC ; bipolar junction transistor BJT ; current gain; surface passivation; SiC etching; complementary bipolar; lateral PNP; Darlington transistors; SPICE modeling; high-temperature; integrated circuits; emitter coupled logic ECL ;

    Sammanfattning : The availability of integrated circuits (ICs) capable of 500 or 600° C operation can be extremely beneficial for many important applications, such as transportation and energy sector industry. It can in fact enable the realization of improved sensing and control of turbine engine combustion leading to better fuel efficiency and reduced pollution. LÄS MER

  5. 5. Design and Fabrication of Silicon Carbide RF MOSFET

    Författare :Gudjon Gudjonsson; Chalmers University of Technology; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 4H-SiC; Metal-Oxide-Semiconductor Field-Effect-Transistor MOSFET ; Silicon Carbide SiC ;

    Sammanfattning : .... LÄS MER