Sökning: "Silicon carbide SiC"

Visar resultat 1 - 5 av 110 avhandlingar innehållade orden Silicon carbide SiC.

  1. 1. Termination and passivation of Silicon Carbide Devices

    Detta är en avhandling från Stockholm : KTH

    Författare :Maciej Wolborski; KTH.; [2005]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Silicon Carbide; SiC; passivation; dielectric materials; NATURAL SCIENCES Physics Condensed matter physics Semiconductor physics; NATURVETENSKAP Fysik Kondenserade materiens fysik Halvledarfysik;

    Sammanfattning : Silicon carbide rectifiers are commercially available since 2001, and MESFET switches are expected to enter the market within a year. Moreover, three inch SiC wafers can be purchased nowadays without critical defects for the device performance and four inch substrate wafers are announced for the year 2005. LÄS MER

  2. 2. Silicon Carbide BipolarTechnology for High Temperature Integrated Circuits

    Detta är en avhandling från Stockholm : KTH Royal Institute of Technology

    Författare :Luigia Lanni; KTH.; [2014]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide SiC ; bipolar junction transistor BJT ; current gain; surface passivation; SiC etching; complementary bipolar; lateral PNP; Darlington transistors; SPICE modeling; high-temperature; integrated circuits; emitter coupled logic ECL ;

    Sammanfattning : The availability of integrated circuits (ICs) capable of 500 or 600° C operation can be extremely beneficial for many important applications, such as transportation and energy sector industry. It can in fact enable the realization of improved sensing and control of turbine engine combustion leading to better fuel efficiency and reduced pollution. LÄS MER

  3. 3. Design and Fabrication of Silicon Carbide RF MOSFET

    Detta är en avhandling från Stockholm : KTH Royal Institute of Technology

    Författare :Gudjon Gudjonsson; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 4H-SiC; Metal-Oxide-Semiconductor Field-Effect-Transistor MOSFET ; Silicon Carbide SiC ;

    Sammanfattning : .... LÄS MER

  4. 4. Silicon Carbide Microwave Transistors and Amplifiers

    Detta är en avhandling från Linköping : Linköpings universitet

    Författare :Rolf Jonsson; Linköpings universitet.; Linköpings universitet.; [2005]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; SiC; MESFET; Physical simulations; Microwave power amplifier; NATURAL SCIENCES; NATURVETENSKAP;

    Sammanfattning : Ibis work deals with silicon carbide (SiC) metal semieonduetor field effect transistors (MESFETs) and microwave amplifiers using them. The wide bandgap (WBG) semiconductors silicon carbide and gallium nitride have a large potential for microwave power generation. LÄS MER

  5. 5. High-Temperature Radio Circuits in Silicon Carbide Bipolar Technology

    Detta är en avhandling från Stockholm : KTH Royal Institute of Technology

    Författare :Muhammad Waqar Hussain; KTH.; [2019]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 4H-SiC; active down-conversion mixer; BJT; EM simulations; silicon carbide; high-temperature; IF amplifier; LTCC; negative resistance oscillator; passives; RF circuits; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : High-temperature electronics find many niche applications in downhole drilling, aviation, automotive and future exploration of inner planets like Venus and Mercury. Past studies have shown the potential of silicon carbide (SiC) electronics for catering these extreme temperature applications. LÄS MER