Sökning: "SiC"

Visar resultat 11 - 15 av 424 avhandlingar innehållade ordet SiC.

  1. 11. Wide Bandgap MMIC Technology

    Författare :Mattias Sudow; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Wide bandgap; AlGaN GaN; SiC MMIC; SiC MESFET; SiC Schottky; Microwave;

    Sammanfattning : Wide bandgap technology for microwave electronics has been an intense area of research during the last decade. With reas of application ranging from base station amplifiers to radar transceivers, this technology has the resources to be the basis for the next generation of high power microwave electronics. LÄS MER

  3. 12. SiC Varactors for Dynamic Load Modulation of Microwave Power Amplifiers

    Författare :Christer Andersson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; nonlinear characterization; varactors; active load-pull; power; microwave; amplifier; dynamic load modulation; SiC; energy efficiency;

    Sammanfattning : The rapid consumer adoption of mobile services is leading to an exponential growth in wireless data traffic. In order to accommodate more concurrent high data-rate users, the required complexity of transmitting radio base station (RBS) power amplifiers (PAs) is increasing. LÄS MER

  4. 13. Electrical characteristics of SiC powders

    Författare :Eva Mårtensson; KTH; []
    Nyckelord :Field grading; Non-linear; SiC powdeer; Conduction mechanisms; Dielectric properties; Potential barrier; Field emissions;

    Sammanfattning : .... LÄS MER

  5. 14. Electrical properties of thermal oxides on SiC manufactured in an alumina furnace

    Författare :Fredrik Allerstam; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; 6H-SiC; 4H-SiC; Silicon carbide; MOS; TDRC; CV; thermal dielectric relaxation current; interface states;

    Sammanfattning : A process to achieve high inversion channel mobility in 4H-SiC MOSFETs is needed to enable manufacturing of devices for high power applications. In this thesis, investigations on the electrical properties of oxides produced in an alumina furnace are presented. LÄS MER

  7. 15. High Efficiency Microwave Amplifiers and SiC Varactors Optimized for Dynamic Load Modulation

    Författare :Christer Andersson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; nonlinear measurements; power amplifiers; load modulation; GaN; SiC; varactors; HEMT; wide bandgap technology; energy efficiency;

    Sammanfattning : The increasing use of mobile networks as the main source of internet connectivity is creating challenges in the infrastructure. Customer demand is a moving target and continuous hardware developments are necessary to supply higher data rates in an environmentally sustainable and cost effective way. LÄS MER