Sökning: "SiC Schottky"

Visar resultat 11 - 15 av 34 avhandlingar innehållade orden SiC Schottky.

1. 11. High-Efficiency SiC Power Conversion : Base Drivers for Bipolar Junction Transistors and Performance Impacts on Series-Resonant Converters

   Författare :Georg Tolstoy; Hans-Peter Nee; Stig Munk-Nielsen; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; Bipolar Junction Transistor BJT ; Resonant converter; Series-resonant converter SLR ; Base drive circuits; High- Efficiency Converters; High-Frequency Converters; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : This thesis aims to bring an understanding to the silicon carbide (SiC) bipolar junction transistor (BJT). SiC power devices are superior to the silicon IGBT in several ways. They are for instance, able to operate with higher efficiency, at higher frequencies, and at higher junction temperatures. LÄS MER

3. 12. Processing and characterization of silicon carbide (6H-SiC and 4H-SiC) contacts for high power and high temperature device applications

   Författare :Sang Kwon Lee; KTH; []
   Nyckelord :Silicon carbide; ohmic and schottky contacts; co-evaporation; current-voltage; powre devices; nano-particles; Schottky barrier height lowering; TLM structures;

   Sammanfattning : Silicon carbide is a promising wide bandgap semiconductormaterial for high-temperature, high-power, and high-frequencydevice applications. However, there are still a number offactors that are limiting the device performance. LÄS MER

4. 13. On Gate Drivers for MOS-Controlled Power Devices and dv-dt Filters for Train Traction Converters

   Författare :Erik Velander; Hans-Peter Nee; Francesco Iannuzzo; KTH; []
   Nyckelord :Power semiconductor devices; DC-AC power converters; Silicon carbide; Insulated gate bipolar transistors; P-i-n diodes; Schottky diodes; Traction motors; Power MOSFET; Krafthalvledare; DC-AC kraftomvandlare; kiselkarbid; IGBT; P-i-n dioder; Schottky dioder; traktionsmotorer; Effekt-MOSFET; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : In this thesis, low-loss gate-drive solutions and a proposed dv/dt-filter have been investigated with focus on train traction converters with dv/dt constraints.By using the silicon carbide (SiC) junction field-effect transistor (JFET), the switching losses can be significantly reduced compared to the commonly used insulated-gate bipolar transistor (IGBT), but complex gate-driver solutions are required for high utilization in terms of loss reduction. LÄS MER

5. 14. Processing and characterization of GaN/SiC heterojunctions and SiC bipolar transistors

   Författare :Erik Danielsson; KTH; []
   Nyckelord :silicon carbide; gallium nitride; device simulation; bipolar junction transistor; heterojunction; heterojunction bipolar transistor; current-voltage measurement; capacitance-voltage measurement; self-heating;

   Sammanfattning : Silicon Carbide (SiC) and Gallium Nitride (GaN) are bothwide bandgap semiconductors that have been suggested for highpower, high voltage, and high temperature applications. Themost investigated SiC devices so far are the Schottky diode,PiN diode and the field effect transistor. LÄS MER

7. 15. Copper germanide schottky contacts to silicon and electrically active defects in n-type 6H-SiC and 4H-SiC epitaxial layers

   Författare :James P. Doyle; KTH; []
   Nyckelord :;

   Sammanfattning : Metallization for contacts to silicon devices presents amajor challenge as the linewidths are further reduced into thesub-micron regime. Copper germanide due to its relatively lowroom temperature resistivity ( ~ 10 µΩ - cm) has beenexamined as a potential contact metallixation. LÄS MER