Sökning: "Si SiGe"

Visar resultat 21 - 25 av 33 avhandlingar innehållade orden Si SiGe.

1. 21. Schottky barriers and Schottky barrier based devices on Si and SiC

   Författare :Christer Fröjdh; KTH; []
   Nyckelord :;

   Sammanfattning : This work is devoted to a study of the formation andcharacterisation of Schottky Barriers on differentsemiconductors with an extension to the development of devicesbased on Schottky barriers. The major part of the work has beendone on 6H-SiC, but Si and SiGe alloys have also been used. LÄS MER

3. 22. Silicon nanowire based devices for More than Moore Applications

   Författare :Ganesh Jayakumar; Per-Erik Hellström; Mikael Östling; Luca Selmi; KTH; []
   Nyckelord :silicon nanowire; biosensor; CMOS; sequential integration; lab-on-chip; LOC; high-K; high-K integration on SiNW biosensor; ALD; fluid gate; back gate; SiNW; SiNW pixel matrix; FEOL; pattern transfer lithography; sidewall transfer lithography; STL; multi-target bio detection; BEOL; nanonets; silicon nanonets; SiNN-FET; SiNW-FET; CMOS integration of nanowires; CMOS integration of nanonets; monolithic 3D integration of nanowires; above-IC integration of nanowires; DNA detection using SiNW; SiNW biosensor; dry environment DNA detection; DNA hybridization detection using SiNW; SiNW functionalization; SiNW silanization; SiNW grafting; FEOL integration of SiNW; BEOL integration of SiNW; sequential multiplexed biodetection; biodetection efficiency of SiNW; front end of line integration of SiNW; back end of line integration of SiNW; SiNW dry environment functionalization; APTES cross-linker; accessing SiNW test site; fluorescence microscopy of SiNW; geometry of SiNW; SiNW biosensor variability; top-down fabrication of SiNW; bottom-up fabrication of SiNW; VLS method; ams foundry CMOS process; adding functionality in BEOL process; sensor integration in BEOL process; hafnium oxide; HfO2; aluminium oxide; Al2O3; TiN backgate; Nickel source drain; ISFET; ion sensitive field effect transistor; Overcoming Nernst limit of detection using SiNW; SiNW sub-threshold region operation; ASIC; SOC; SiGe selective epitaxy; epitaxial growth of SiNW; epitaxial growth of nanowires; epitaxial growth of nanonets; nickel silicide contacts; salicide process; high yield SiNW fabrication; high volume SiNW fabrication; silicon ribbon; SiRi pixel; SiRi biosensor; SiRi DNA detection; monolithic 3D integration of nanonets; above-IC integration of nanonets; impact of back gate voltage on silicon nanowire; impact of back gate voltage on SiNW; FDSOI; fully depleted silicon on insulator technology; metal backgate; wafer scale integration of SiNW; wafer scale integration of nanonets; impact of backgate voltage on CMOS inverter circuit; frequency divider; D flip-flop; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. LÄS MER

4. 23. Wideband Watt-Level Spatial Power-Combined Power Amplifier in SiGe BiCMOS Technology for Efficient mm-Wave Array Transmitters

   Författare :Artem Roev; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; integration; spatial power combining; substrate integrated waveguide; array amplifiers; RFIC;

   Sammanfattning : The continued demand for high-speed wireless communications is driving the development of integrated high-power transmitters at millimeter wave (mm-Wave) frequencies. Si-based technologies allow achieving a high level of integration but usually provide insufficient generated RF power to compensate for the increased propagation and material losses at mm-Wave bands due to the relatively low breakdown voltage of their devices. LÄS MER

5. 24. Optical characterization of Silicon-based self-assembled nanostructures

   Författare :Bouchaib Adnane; Wei-Xin Ni; Per Olof Holtz; Göran Hansson; Susumo Fukatsu; Linköpings universitet; []
   Nyckelord :NATURAL SCIENCES; NATURVETENSKAP;

   Sammanfattning : This PhD thesis summarizes the work carried on the optical characterizations of some Si-based self-assembled nanostructures, particularly SiGe/Si quantum dots (QDs) and nanocrystalline (nc)-Si embedded in mesoporous silica (MS) using photoconductivity (PC), photoluminescence (PL), and photoluminescence excitation (PLE) measurements. The spectroscopic studies of SiGe/Si QDs grown on Si by molecular beam epitaxy revealed for the first time well-resolved PLE resonances. LÄS MER

7. 25. Germanium layer transfer and device fabrication for monolithic 3D integration

   Författare :Ahmad Abedin; Mikael Östling; Cor Claeys; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Monolithic; sequential; 3D; silicon; germanium; wafer bonding; etch back; germanium on insulator; GOI; Ge pFET; low temperature; Sipassivation; pn junction; Kisel; germanium; epitaxi; selektiv; pn-övergång; germanium påisolator; GOI; Ge PFET; bonding; monolitisk; sekventiell; tre dimensionell; 3D; lågtemperarad;

   Sammanfattning : Monolithic three-dimensional (M3D) integration, it has been proposed,can overcome the limitations of further circuits’ performance improvementand functionality expansion. The emergence of the internet of things (IoT) isdriving the semiconductor industry toward the fabrication of higher-performancecircuits with diverse functionality. LÄS MER