Sökning: "Si SiGe"

Visar resultat 16 - 20 av 33 avhandlingar innehållade orden Si SiGe.

1. 16. Device design and process integration for SiGeC and Si/SOI bipolar transistors

   Författare :Erik Haralson; KTH; []
   Nyckelord :Silicon-Germanium SiGe ; SiGeC; heterojunction bipolar transistor HBT ; nickel silicide; selectively implanted collector SIC ; device simulation; SiGeC layer staiblity; high resolution x-ray diffraction HRXRD ; silicon-on.insulator SOI ; self-heating;

   Sammanfattning : SiGe is a significant enabling technology for therealization of integrated circuits used in high performanceoptical networks and radio frequency applications. In order tocontinue to fulfill the demands for these applications, newmaterials and device structures are needed. LÄS MER

3. 17. Si-based structures for light emission and detection

   Författare :Amir Karim; Göran Hansson; Wei-Xin Ni; Tom Gregorkiewicz; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Physics; Fysik;

   Sammanfattning : Efforts to improve the optical performance of the indirect bandgap semiconductor silicon (Si) has been a major subject of research in the field of Si photonics due to the promising applications of Si based light emitters and detectors for optical communication. With that motivation three different Si based material systems were investigated; Si:Er/O layered structures, SiGe quantum dots and SiSn nano structures, all grown using the technique of molecular beam epitaxy (MBE). LÄS MER

4. 18. Integration of epitaxial SiGe(C) layers in advanced CMOS devices

   Författare :Julius Hållstedt; Henry Radamson; Eugene A. Fitzgerald; KTH; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Silicon Germanium Carbon SiGeC ; Chemical Vapor Deposition CVD ; Epitaxy; Pattern Dependency; MOSFET; Mobility; Spacer Gate Technology; Semiconductor physics; Halvledarfysik;

   Sammanfattning : Heteroepitaxial SiGe(C) layers have attracted immense attention as a material for performance boost in state of the art electronic devices during recent years. Alloying silicon with germanium and carbon add exclusive opportunities for strain and bandgap engineering. LÄS MER

5. 19. Resonant states in modulation-doped heterostructures

   Författare :Anders Blom; Matematisk fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Mathematical and general theoretical physics; generation-recombination noise; THz laser; classical mechanics; relativity; quantum mechanics; statistisk fysik; gravitation; relativitet; kvantmekanik; klassisk mekanik; Matematisk och allmän teoretisk fysik; thermodynamics; termodynamik; statistical physics; donor energies; Si SiGe quantum well; central-cell effect; impurity absorption; Fysicumarkivet A:2003:Blom; Resonant states; impurity levels;

   Sammanfattning : This thesis deals with the properties of donors placed inside or outside a heterostructure quantum well (QW). The focus of the investigation has been on the formation of resonant states, which are a hybridization of the discrete localized impurity levels and the continuous two-dimensional QW subbands. LÄS MER

7. 20. Application of SiGe(C) in high performance MOSFETs and infrared detectors

   Författare :Mohammadreza Kolahdouz Esfahani; Henry Radamson; Ya-Hong Xie; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Germanium Carbon SiGeC ; Reduced Pressure Chemical Vapor Deposition RPCVD ; Epitaxy; Pattern Dependency; MOSFET; Mobility; bolometer; Quantum Well; Infrared IR Detection; Ni Silicide; High Resolution X-ray Diffraction HRXRD ; High Resolution Scanning Electron Microscopy HRSEM ; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik;

   Sammanfattning : Epitaxially grown SiGe(C) materials have a great importance for many device applications. In these applications, (strained or relaxed) SiGe(C) layers are grown either selectively on the active areas, or on the entire wafer. LÄS MER