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Hittade 2 avhandlingar som matchar ovanstående sökkriterier.
1. Microwave Power Devices and Amplifiers for Radars and Communication Systems
Sammanfattning : SiC MESFETs and GaN HEMTs posses an enormous potential in power amplifiers at microwave frequencies due to their wide bandgap features of high electric field strength, high electron saturation velocity and high operating temperature. The high power density combined with the comparably high impedance attainable by these devices also offers new possibilities for wideband power microwave systems. LÄS MER
2. Wide Bandgap Semiconductor (SiC & GaN) Power Amplifiers in Different Classes
Sammanfattning : SiC MESFETs and GaN HEMTs have an enormous potential in high-power amplifiers at microwave frequencies due to their wide bandgap features of high electric breakdown field strength, high electron saturation velocity and high operating temperature. The high power density combined with the comparably high impedance attainable by these devices also offers new possibilities for wideband power microwave systems. LÄS MER