Sökning: "Semiconductor quantum wells"
Visar resultat 1 - 5 av 34 avhandlingar innehållade orden Semiconductor quantum wells.
1. Carrier dynamics in semiconductor quantum dots
Sammanfattning : This thesis presents results of time-resolved photoluminescence experiments conducted on several different self-assembled InGaAs/GaAs and InAs/GaAs semiconductor quantum dot (QD) structures. Depending on the application in mind, different structural, electronic or optical properties have a different weight of importance. LÄS MER
2. Effects of the Spin-Orbit Interaction on Transport and Optical Properties of III-V Semiconductor Quantum Wells
Sammanfattning : Effects of the intrinsic electron spin-orbit interaction on transport and optical properties of III-V semiconductor quantum wells have been studied theoretically. It is shown that due to crystal anisotropy of this interaction, the weak localization magnetoresistance in a magnetic field parallel to interfaces is very sensitive to the epitaxy growth direction and also to the orientation of the magnetic field with respect to the crystal axes. LÄS MER
3. Zeeman Interaction in Low-Dimensional III-V Semiconductor Structures
Sammanfattning : The Zeeman interaction in low-dimensional III-V semiconductor nanostructures is studied. The effective g-value of bulk InGaAs is measured by two different spin resonance techniques. Experimental conditions were found to control the Overhauser effect, thus enabling a highly accurate determination of the g-value, g* = -4.070 ± 0. LÄS MER
4. MOVPE Growth and Characterization of Low-Dimensional III-V Semiconductor Structures
Sammanfattning : Metalorganic vapour phase epitaxy is used for growth of low-dimensional III-V semiconductor structures. The roughness of heterointerfaces in GaAs/GaInP quantum well structures is studied by photoluminescence emission from extremely narrow quantum wells. LÄS MER
5. Dilute Nitride Lasers and Spectrally Engineered Semiconductor Laser Resonators
Sammanfattning : The first part of this thesis deals with long wavelength (1.2-1.3 um) InGaAs(N)multiple quantum-well (QW) lasers grown on GaAs, with the aim of understandingand improving their threshold and temperature characteristics. The epitaxialmaterial is grown by molecular beam epitaxy (MBE). LÄS MER