Sökning: "Selective Area Epitaxy"

Visar resultat 1 - 5 av 11 avhandlingar innehållade orden Selective Area Epitaxy.

  1. 1. Application of SiGe(C) in high performance MOSFETs and infrared detectors

    Författare :Mohammadreza Kolahdouz Esfahani; Henry Radamson; Ya-Hong Xie; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Germanium Carbon SiGeC ; Reduced Pressure Chemical Vapor Deposition RPCVD ; Epitaxy; Pattern Dependency; MOSFET; Mobility; bolometer; Quantum Well; Infrared IR Detection; Ni Silicide; High Resolution X-ray Diffraction HRXRD ; High Resolution Scanning Electron Microscopy HRSEM ; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik;

    Sammanfattning : Epitaxially grown SiGe(C) materials have a great importance for many device applications. In these applications, (strained or relaxed) SiGe(C) layers are grown either selectively on the active areas, or on the entire wafer. LÄS MER

  3. 2. Design and fabrication of long wavelength vertical cavity lasers on GaAs substrates

    Författare :Rickard Marcks von Würtemberg; Mattias Hammar; Markus Amann; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; VCSEL; Selective Area Epitaxy; Epitaxial regrowth; Laser; Semiconductor physics; Halvledarfysik;

    Sammanfattning : Vertical cavity surface emitting lasers (VCSELs) are today a commodity on the short wavelength laser market due to the ease with which they are manufactured. Much effort has in the last decade been directed towards making long wavelength VCSELs as successful in the marketplace. LÄS MER

  4. 3. Self-Assembled and Selective-Area Growth of Group III-Nitride Semiconductor Nanorods by Magnetron Sputter Epitaxy

    Författare :Elena Alexandra Serban; Ching-Lien Hsiao; Jens Birch; Per Persson; Lars Hultman; Eva Monroy; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : The III-nitride semiconductor family includes gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), and the related ternary and quaternary alloys. The research interest on this group of materials is sparked by the direct bandgaps, and excellent physical and chemical properties. LÄS MER

  5. 4. Infrared Photodetectors based on InSb and InAs Nanostructures via Heterogeneous Integration-Rapid Melt Growth and Template Assisted Selective Epitaxy

    Författare :Heera Menon; NanoLund: Centre for Nanoscience; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Rapid Melt Growth RMG ; Template Assisted Selective Epitaxy TASE ; InSb; InAs; infrared detectors; nBn detector; photoconductor; nanostructures; nanowires;

    Sammanfattning : Monolithic heterogeneous integration of III-V semiconductors with the contemporary Si Complementary Metal Oxide Semiconductor (CMOS) technology has instigated a wide range of possibilities and functionalities in the semiconductor industry, in the field of digital circuits, optical sensors, light emitters, and high-frequency communication devices. However, the integration of III-V semiconductors is not trivial due to the differences in lattice parameters, polarity, and thermal expansion coefficient. LÄS MER

  7. 5. Selective Epitaxy of Indium Phosphide and Heteroepitaxy of Indium Phosphide on Silicon for Monolithic Integration

    Författare :Fredrik Olsson; Sebastian Lourdudoss; Shigeya Naritsuka; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Semiconductor Physics; Semiconductor physics; Halvledarfysik;

    Sammanfattning : A densely and monolithically integrated photonic chip on indium phosphide is greatly in need for data transmission but the present day’s level of integration in InP is very low. Silicon enjoys a unique position among all the semiconductors in its level of integration. LÄS MER