Sökning: "Schottky-Barrier SB"

Hittade 5 avhandlingar innehållade orden Schottky-Barrier SB.

  1. 1. Integration of silicide nanowires as Schottky barrier source/drain in FinFETs

    Detta är en avhandling från Stockholm : KTH

    Författare :Zhen Zhang; KTH.; [2008]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CMOS technology; MOSFET; FinFET; Schottky diode; Schottky barrier soure drain; silicide; SALICIDE; SOI; multiple-gate; nanowire; sidewall transfer lithography; TECHNOLOGY Electrical engineering; electronics and photonics Electronics; TEKNIKVETENSKAP Elektroteknik; elektronik och fotonik Elektronik;

    Sammanfattning : The steady and aggressive downscaling of the physical dimensions of the conventional metal-oxide-semiconductor field-effect-transistor (MOSFET) has been the main driving force for the IC industry and information technology over the past decades. As the device dimensions approach the fundamental limits, novel double/trigate device architecture such as FinFET is needed to guarantee the ultimate downscaling. LÄS MER

  2. 2. Fabrication, characterization, and modeling of metallic source/drain MOSFETs

    Detta är en avhandling från Stockholm : KTH Royal Institute of Technology

    Författare :Valur Gudmundsson; KTH.; [2011]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Metallic source drain; contact resistivity; Monte Carlo; NiSi; PtSi; SOI; UTB; tri-gate; FinFET; multiple-gate; nanowire; MOSFET; CMOS; Schottky barrier; silicide; SALICIDE;

    Sammanfattning : As scaling of CMOS technology continues, the control of parasitic source/drain (S/D) resistance (RSD) is becoming increasingly challenging. In order to control RSD, metallic source/drain MOSFETs have attracted significant attention, due to their low resistivity, abrupt junction and low temperature processing (≤700 °C). LÄS MER

  3. 3. Spin Transport in Two-Dimensional Material Heterostructures

    Detta är en avhandling från Stockholm : KTH Royal Institute of Technology

    Författare :André Dankert; [2015]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Black phosphorous; Topological insulator; h-BN; Silicon; Transistor; Spintronic; MoS2; Graphene; 2D materials; Spin polarized tunnelling; Schottky barrier;

    Sammanfattning : Spintronics is considered as an alternative for information processing beyond the charge based technology. The spintronic device performance depend on the spin relaxation mechanisms in the channel material. Si and graphene are interesting for their long spin coherence lengths and ideal for spin transport channels. LÄS MER

  4. 4. Integration of metallic source/drain contacts in MOSFET technology

    Detta är en avhandling från Stockholm : KTH

    Författare :Jun Luo; KTH.; [2010]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; CMOS technology; MOSFET; Schottky barrier MOSFET; metallic source drain; contact resistivity; NiSi; PtSi; SALICIDE; ultrathin silicide; FinFET; NATURAL SCIENCES Physics Condensed matter physics Semiconductor physics; NATURVETENSKAP Fysik Kondenserade materiens fysik Halvledarfysik;

    Sammanfattning : The continuous and aggressive downscaling of conventional CMOS devices has been driving the vast growth of ICs over the last few decades. As the CMOS downscaling approaches the fundamental limits, novel device architectures such as metallic source/drain Schottky barrier MOSFET (SB-MOSFET) and SB-FinFET are probably needed to further push the ultimate downscaling. LÄS MER

  5. 5. Silicon Nanowires for Biomolecule Detection

    Detta är en avhandling från Stockholm : KTH

    Författare :Niklas Elfström; KTH.; [2008]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TECHNOLOGY Engineering physics Material physics with surface physics; TEKNIKVETENSKAP Teknisk fysik Materialfysik med ytfysik;

    Sammanfattning : Starting from silicon on insulator (SOI) material, with a top silicon layer thickness of 100 nm, silicon nanowires were fabricated in a top down approach using electron beam (e-beam) lithography and subsequent eactive ion etching (RIE) and oxidation. Nanowires as narrow as 30 nm could be achieved. LÄS MER