Sökning: "Schottky junction"

Visar resultat 1 - 5 av 22 avhandlingar innehållade orden Schottky junction.

  1. 1. Junction barrier schottky rectifiers in silicon carbide

    Författare :Fanny Dahlquist; KTH; []
    Nyckelord :Silicon carbide; JBS rectifier; Junction Barrier Schottky JBS ; Schottky rectifieer; Power rectifier; Unipolar devices; Punch-through design;

    Sammanfattning : .... LÄS MER

  3. 2. Junction Barrier Schottky Rectifiers in Silicon Carbide

    Författare :Fanny Dahlquist; KTH; []
    Nyckelord :silicon carbide; JBS rectifier; Junction Barrier Schottky JBS ; Schottky rectifier; MPS rectifier; power rectifier; punch-through design; power loss; high blocking voltage;

    Sammanfattning : .... LÄS MER

  4. 3. Simulation and Electrical Evaluation of 4H-SiC Junction Field Effect Transistors and Junction Barrier Schottky Diodes with Buried Grids

    Författare :Jang-Kwon Lim; Hans-Peter Nee; Mietek Bakowski; Ichiro Omura; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon carbide SiC ; junction field-effect transistors JFETs ; junction barrier schottky diode JBS ; schottky barrier diode SBD ; buried-grid BG technology; simulation; implantation; epitaxial growth; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : Silicon carbide (SiC) has higher breakdown field strength than silicon (Si), which enables thinner and more highly doped drift layers compared to Si. Consequently, the power losses can be reduced compared to Si-based power conversion systems. Moreover, SiC allows the power conversion systems to operate at high temperatures up to 250 oC. LÄS MER

  5. 4. Noise Aspects of some Si-based One Port Devices and Carbon Nanotubes

    Författare :Hassan Ouacha; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; etching; Schottky contacts; noise; fluctuations; generation; mobility; noise spectroscopy; recombination; p-n diodes; carbon nanotubes; thermal reaction; junction; defects; co-sputtering; irradiation; interface states; low frequency noise;

    Sammanfattning : The p-n junctions and Schottky diodes based on Si1-xGex and SiC are of great importance in modern electronic applications, such as microwave detectors and mixers. Carbon nanotubes (CNTs) have appeared recently as an attractive new class of materials with a reduced dimensionality, and proposed as building blocks for nanoelectronic technology. LÄS MER

  7. 5. Modelling of Terahertz Planar Schottky Diodes

    Författare :Aik-Yean Tang; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; S-parameter extraction; Electro-thermal; Schottky diodes; Skin effect; Electromagnetic; Frequency multipliers; High-power frequency multiplier; Current crowding; Proximity effect; Submillimetre wave generation and detection; Geometric modelling; Gallium Arsenide;

    Sammanfattning : This thesis deals with the modelling of THz planar Schottky diodes, focusing on analyses of the geometry- dependent parasitics and the diode chip thermal management. Moving towards higher operating frequencies, the electromagnetic couplings pose significant limitations on the diode performance. LÄS MER