Sökning: "Schottky diodes"

Visar resultat 16 - 20 av 50 avhandlingar innehållade orden Schottky diodes.

1. 16. Noise Aspects of some Si-based One Port Devices and Carbon Nanotubes

   Författare :Hassan Ouacha; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; etching; Schottky contacts; noise; fluctuations; generation; mobility; noise spectroscopy; recombination; p-n diodes; carbon nanotubes; thermal reaction; junction; defects; co-sputtering; irradiation; interface states; low frequency noise;

   Sammanfattning : The p-n junctions and Schottky diodes based on Si1-xGex and SiC are of great importance in modern electronic applications, such as microwave detectors and mixers. Carbon nanotubes (CNTs) have appeared recently as an attractive new class of materials with a reduced dimensionality, and proposed as building blocks for nanoelectronic technology. LÄS MER

3. 17. Three-Dimensional Metal-Semiconductor Heterostructures for Device Applications

   Författare :Lars-Erik Wernersson; Institutionen för elektro- och informationsteknik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; Schottky contacts; space-charge spectroscopy; ballistic transport; Coulomb repulsion; electron interference; resonant tunnelling; lateral confinement; heterojunction permeable base transistor; resonant tunnelling diodes; Fysicumarkivet A:1998:Wernersson; Fysik; Physics; resonant tun; epitaxial overgrowth;

   Sammanfattning : Fabrication and characterisation of buried metal contacts in compound semiconductors are demonstrated. The contacts have been investigated due to their usage both as gates in transistors and as active or passive elements in novel devices. LÄS MER

4. 18. Heterostructure Diodes for Millimeter Wave Power Generation

   Författare :Hans Grönqvist; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Single barrier varactor diode; AlSb barrier; InAs substrate; high frequencies; Resonant Tunneling Diode;

   Sammanfattning : This thesis deals with two types of heterostructure diodes namely the Resonant Tunneling Diode (RTD) and the Single barrier varactor diode (SBV). The RTD is a device for high frequency generation either as a negative reistance oscillators or as a multiplier. Different means to reach high frequencies are outlined. LÄS MER

5. 19. Fabrication, characterization, and modeling of metallic source/drain MOSFETs

   Författare :Valur Gudmundsson; Per-Erik Hellström; Yee-Chia Yeo; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Metallic source drain; contact resistivity; Monte Carlo; NiSi; PtSi; SOI; UTB; tri-gate; FinFET; multiple-gate; nanowire; MOSFET; CMOS; Schottky barrier; silicide; SALICIDE;

   Sammanfattning : As scaling of CMOS technology continues, the control of parasitic source/drain (S/D) resistance (RSD) is becoming increasingly challenging. In order to control RSD, metallic source/drain MOSFETs have attracted significant attention, due to their low resistivity, abrupt junction and low temperature processing (≤700 °C). LÄS MER

7. 20. Silicon Carbide Microwave Devices

   Författare :Joakim Eriksson; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SBD; high-power microwave devices; Silicon Carbide; diode mixer; wide band gap devices; physical simulations; resistive mixer; microwave devices; MESFET; Schottky diode;

   Sammanfattning : This work deals with silicon carbide (SiC) microwave devices. It treats two devices; the Schottky diode and the metal semiconductor field effect transistor (MESFET). Different MESFET materials, fabrication processes, theoretical models for physical simulation, and device models are presented. LÄS MER