Sökning: "Schottky diodes"

Visar resultat 11 - 15 av 50 avhandlingar innehållade orden Schottky diodes.

  1. 11. Millimetre wave waveguide enclosed grid frequency multipliers and imaging

    Författare :Robin Dahlbäck; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Millimeter wave; THz imaging; THz sources; Grid; Heterostructure Barrier Var- actors HBVs ; Varactors; Array; FMCW; 2D-grid; Quasi-optical.; Frequency multipliers; Radars; sub-millimetre waves; Schottky diodes;

    Sammanfattning : The utilisation of the THz spectrum ( 0.3-10 THz ) is hampered by fundamental difficulties in generating power at these frequencies. LÄS MER

  3. 12. Simulation and Electrical Evaluation of 4H-SiC Junction Field Effect Transistors and Junction Barrier Schottky Diodes with Buried Grids

    Författare :Jang-Kwon Lim; Hans-Peter Nee; Mietek Bakowski; Ichiro Omura; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon carbide SiC ; junction field-effect transistors JFETs ; junction barrier schottky diode JBS ; schottky barrier diode SBD ; buried-grid BG technology; simulation; implantation; epitaxial growth; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : Silicon carbide (SiC) has higher breakdown field strength than silicon (Si), which enables thinner and more highly doped drift layers compared to Si. Consequently, the power losses can be reduced compared to Si-based power conversion systems. Moreover, SiC allows the power conversion systems to operate at high temperatures up to 250 oC. LÄS MER

  4. 13. Schottky barriers and Schottky barrier based devices on Si and SiC

    Författare :Christer Fröjdh; KTH; []
    Nyckelord :;

    Sammanfattning : This work is devoted to a study of the formation andcharacterisation of Schottky Barriers on differentsemiconductors with an extension to the development of devicesbased on Schottky barriers. The major part of the work has beendone on 6H-SiC, but Si and SiGe alloys have also been used. LÄS MER

  5. 14. Numerical modelling of hot electron transport in Schottky-diodes and heterojunction structures

    Författare :Hans Hjelmgren; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; n-GaAs; ; energy balance equations; dc-properties;

    Sammanfattning : A one-dimensional drift-diffusion model, including energy balance equations, is used to model Schottky-diodes and heterojunction structures. The set of equations are solved simultaneously with a finite-difference iterative scheme. LÄS MER

  7. 15. Tunneling Based Electronic Devices

    Författare :Erik Lind; Institutionen för elektro- och informationsteknik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiGe; Esaki Diodes; classical mechanics; quantum mechanics; relativity; termodynamik; relativitet; kvantmekanik; statistisk fysik; Matematisk och allmän teoretisk fysik; thermodynamics; gravitation; statistical physics; GaAs; Mathematical and general theoretical physics; Resonant Tunneling Permeable Base Transistors; Resonant Tunneling Diodes; klassisk mekanik; Fysicumarkivet A:2004:Lind;

    Sammanfattning : This thesis concerns different kinds of tunneling based devices all showing negative differential resistance. The thesis is divided in three parts, resonant tunneling transistors, Esaki diodes and coupled zero dimensional systems. LÄS MER