Sökning: "Schottky diode"

Visar resultat 21 - 25 av 37 avhandlingar innehållade orden Schottky diode.

1. 21. Study of Six-Port Modulators and Demodulators for High-Speed Data Communications

   Författare :Joakim Östh; Shaofang Gong; Magnus Karlsson; Robert Weigel; Linköpings universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

   Sammanfattning : There is an increasing demand for high-speed wireless data communications to support consumers’ need for, among other things, real time streaming of high definition video and fast file transfers. One radio architecture that has a potential to meet the increasing demand for high-speed data communications is a radio technique based on the six-port architecture. LÄS MER

3. 22. Physical simulation, fabrication and characterization of Wide bandgap semiconductor devices

   Författare :Sadia Muniza Faraz; Qamar ul Wahab; Linköpings universitet; []
   Nyckelord :NATURAL SCIENCES; NATURVETENSKAP;

   Sammanfattning : Wide band gap semiconductors, Zinc Oxide (ZnO), Gallium Nitride (GaN) and Silicon Carbide (SiC) have been emerged to be the most promising semiconductors for future applications in electronic, optoelectronic and power devices. They offer incredible advantages in terms of their optical properties, DC and microwave frequencies power handling capability, piezoelectric properties in building electromechanical coupled sensors and transducers, biosensors and bright light emission. LÄS MER

4. 23. On Reliability of SiC Power Devices in Power Electronics

   Författare :Diane-Perle Sadik; Hans-Peter Nee; Per Ranstad; Nando Kaminski; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; Metal-Oxide-Semiconductor Field-Effect Transistor MOSFET ; Junction Field-Effect Transistor JFET ; Bipolar Junction Transistor BJT ; Reliability; Failure Analysis; Reliability Testing; Short- Circuit Currents; Humidity; Resonant converter; Series-resonant converter SLR ; Base drive circuits; Gate drive circuits; Life-Cycle Cost Analysis LCCA ; Kiselkarbid; MOSFETar; JFETar; Bipolär Junction Transistor BJT ; Tillförlitlighet; Robusthet; Felanalys; Tillförlitlighetstestning; Kortslutningsströmmar; Luftfuktighet; Resonansomvandlare; Serie-resonansomvandlare SLR ; Basdrivkretsar; Gate-drivkretsar; Felskydd; Livscykelkostnadsanalys; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1. LÄS MER

5. 24. Design, Processing and Characterization of Silicon Carbide Diodes

   Författare :Uwe Zimmermann; KTH; []
   Nyckelord :silicon carbide; diodes; high-voltage; dislocations; electronics;

   Sammanfattning : Electronic power devices made of silicon carbide promisesuperior performance over today's silicon devices due toinherent material properties. As a result of the material'swide band gap of 3. LÄS MER

7. 25. Development of new characterization techniques for III-V nanowire devices

   Författare :Olof Persson; Synkrotronljusfysik; []
   Nyckelord :STM; XPS; Semiconductor nanowires; nanowire devices; top contact mode; HAXPES; Fysicumarkivet A:2017:Persson;

   Sammanfattning : This dissertation presents the new methods and techniques developed to investigate the properties of nanowires (NWs) and NW devices and the results obtained using these methods. The growth and characterization of NWs have become a large research field because NWs have been shown to improve the properties of many semiconductor applications such as transistors, solar cells, and light emitting diodes. LÄS MER