Sökning: "Schottky contacts"

Visar resultat 21 - 25 av 28 avhandlingar innehållade orden Schottky contacts.

  1. 21. Contacts on Silicon Carbide by Use of Nickel and Tantalum ---Preparation and Characterisation

    Författare :Yu Cao; Chalmers tekniska högskola; []
    Nyckelord :Keywords: Silicon Carbide; Metal Contact; Thin Films; Preferential Etching; Interfacial Reaction; effect; Nickel; Tantalum; #955; Depth Profile; I-V Characteristics.;

    Sammanfattning : Silicon carbide (SiC) is one of the attractive semiconductors due to its good electrical, thermal and mechanical properties. It is a promising material for high temperature, high power and high frequency application. Reliable electrodes are always necessary to utilise SiC for electronic devices. LÄS MER

  2. 22. Physical simulation, fabrication and characterization of Wide bandgap semiconductor devices

    Författare :Sadia Muniza Faraz; Qamar ul Wahab; Linköpings universitet; []
    Nyckelord :NATURAL SCIENCES; NATURVETENSKAP;

    Sammanfattning : Wide band gap semiconductors, Zinc Oxide (ZnO), Gallium Nitride (GaN) and Silicon Carbide (SiC) have been emerged to be the most promising semiconductors for future applications in electronic, optoelectronic and power devices. They offer incredible advantages in terms of their optical properties, DC and microwave frequencies power handling capability, piezoelectric properties in building electromechanical coupled sensors and transducers, biosensors and bright light emission. LÄS MER

  3. 23. Modelling electrical properties of composite materials

    Författare :Eva Mårtensson; KTH; []
    Nyckelord :;

    Sammanfattning : Composite field grading materials are used to avoid stressconcentrations in high voltage applications such as cableaccessories and generator or motor end windings. The compositematerials consist of an insulating matrix filled with suitableconducting or semi-conducting particles. Silicon carbide (SiC)powder is one such filler that is being employed. LÄS MER

  4. 24. Development of new characterization techniques for III-V nanowire devices

    Författare :Olof Persson; Synkrotronljusfysik; []
    Nyckelord :STM; XPS; Semiconductor nanowires; nanowire devices; top contact mode; HAXPES; Fysicumarkivet A:2017:Persson;

    Sammanfattning : This dissertation presents the new methods and techniques developed to investigate the properties of nanowires (NWs) and NW devices and the results obtained using these methods. The growth and characterization of NWs have become a large research field because NWs have been shown to improve the properties of many semiconductor applications such as transistors, solar cells, and light emitting diodes. LÄS MER

  5. 25. Development and Characterisation of SiC Based Sensors for Harsh Environments

    Författare :Lars Unéus; Jacobus H. Visser; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : The introduction of chemical gas sensors in our environment is a process that started many years ago. However, although the process has been rather slow over the years, the interest for chemical gas sensors is rising due to the growing environmental awareness. LÄS MER