Sökning: "Schottky contacts"
Visar resultat 11 - 15 av 28 avhandlingar innehållade orden Schottky contacts.
11. Nanomechanics – Quantum Size Effects, Contacts, and Triboelectricity
Sammanfattning : Nanomechanics is different from the mechanics that we experience in everyday life. At the nano-scale, typically defined as 1 to 100 nanometers, some phenomena are of crucial importance, while the same phenomena can be completely neglected on a larger scale. LÄS MER
12. Fabrication, characterization, and modeling of metallic source/drain MOSFETs
Sammanfattning : As scaling of CMOS technology continues, the control of parasitic source/drain (S/D) resistance (RSD) is becoming increasingly challenging. In order to control RSD, metallic source/drain MOSFETs have attracted significant attention, due to their low resistivity, abrupt junction and low temperature processing (≤700 °C). LÄS MER
13. Atom-Probe Field-Ion Microscopy of Electronic Materials
Sammanfattning : This thesis presents work in which atom-probe field-ion microscopy (APFIM) has been applied to two types of electronic materials. In the case of metal/GaAs contacts, the purpose was to characterise the microstructure of the contact interface, particularly the chemical composition variation across the interface. LÄS MER
14. Spin Transport in Two-Dimensional Material Heterostructures
Sammanfattning : Spintronics is considered as an alternative for information processing beyond the charge based technology. The spintronic device performance depend on the spin relaxation mechanisms in the channel material. Si and graphene are interesting for their long spin coherence lengths and ideal for spin transport channels. LÄS MER
15. Processing, Characterization and Modeling of AlGaN/GaN HEMTs
Sammanfattning : III-Nitrides electronic properties make them currently the materials of choice for high-power high-frequency applications. Their wide bandgaps, high breakdown fields, the high electron peak and saturation velocities combined with the large conduction band offset and the high electron mobility observed in AlGaN/GaN heterostructures enable excellent microwave power performance of AlGaN/GaN high electron mobility transistors (HEMTs). LÄS MER