Sökning: "SOI"

Visar resultat 6 - 10 av 76 avhandlingar innehållade ordet SOI.

1. 6. Wafer Bonding - Problems and Possibilities

   Författare :Mats Bergh; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SOI; atomic force microscope; micromechanics; compliant substrates; wafer bonding; semi-insulating silicon; AFM; surface chemistry; diamond; silicon on insulator; aluminium nitride; microelectronics; surface roughness;

   Sammanfattning : The wafer bonding technology offers a unique opportunity to combine different materials. This has been used for the realisation of novel silicon on insulator (SOI) structures. By replacing the buried silicon dioxide layer with a polycrystalline diamond film the thermal properties of the SOI structure are improved. LÄS MER

3. 7. Implementation of Flash Analog-to-Digital Converters in Silicon-on-Insulator Technology

   Författare :Erik Säll; Mark Vesterbacka; Bengt E. Jonsson; Linköpings universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; flash analog-to-digital converter; ADC; silicon-on-insulator; SOI; top-down design; dynamic element matching; DEM; thermometer-to-binary encoder; flash ADC modeling; Electronics; Elektronik;

   Sammanfattning : High speed analog-to-digital converters (ADCs) used in, e.g., read channel and ultra wideband (UWB) applications are often based on a flash topology. The read channel applications is the intended application of this work, where a part of the work covers the design of two different types of 6-bit flash ADCs. LÄS MER

4. 8. Implementation of Flash Analog-to-Digital Converters in Silicon-on-Insulator CMOS Technology

   Författare :Erik Säll; Mark Vesterbacka; Bengt E. Jonsson; Linköpings universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; analog-to-digital converters; ADC; silicon-on-insulator; SOI; Electronics; Elektronik;

   Sammanfattning : A 130 nm partially depleted silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technology is evaluated with respect to analog circuit implementation. We perform the evaluation through implementation of three flash analog-to-digital converters (ADCs). LÄS MER

5. 9. Low-frequency noise characterization, evaluation and modeling of advanced Si- and SiGe-based CMOS transistors

   Författare :Martin von Haartman; Mikael Östling; Cor Claeys; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; SOI; SiGe; strain; high-k; metal gate; 1 f noise; low-frequency noise; mobility fluctuations; phonons; number fluctuations; traps; buried channel; mobility; substrate bias; Electronics; Elektronik;

   Sammanfattning : A wide variety of novel complementary-metal-oxide-semiconductor (CMOS) devices that are strong contenders for future high-speed and low-noise RF circuits have been evaluated by means of static electrical measurements and low-frequency noise characterizations in this thesis. These novel field-effect transistors (FETs) include (i) compressively strained SiGe channel pMOSFETs, (ii) tensile strained Si nMOSFETs, (iii) MOSFETs with high-k gate dielectrics, (iv) metal gate and (v) silicon-on-insulator (SOI) devices. LÄS MER

7. 10. Integration of silicide nanowires as Schottky barrier source/drain in FinFETs

   Författare :Zhen Zhang; Shi-Li Zhang; Tsu-Jae King Liu; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CMOS technology; MOSFET; FinFET; Schottky diode; Schottky barrier soure drain; silicide; SALICIDE; SOI; multiple-gate; nanowire; sidewall transfer lithography; Electronics; Elektronik;

   Sammanfattning : The steady and aggressive downscaling of the physical dimensions of the conventional metal-oxide-semiconductor field-effect-transistor (MOSFET) has been the main driving force for the IC industry and information technology over the past decades. As the device dimensions approach the fundamental limits, novel double/trigate device architecture such as FinFET is needed to guarantee the ultimate downscaling. LÄS MER