Sökning: "SOI"

Visar resultat 11 - 15 av 76 avhandlingar innehållade ordet SOI.

1. 11. Electro-Acoustic and Electronic Applications Utilizing Thin Film Aluminium Nitride

   Författare :David Michael Martin; J. Olsson; I. Katardjiev; S. Gevorgian; Uppsala universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; AlN; FBAR; FPAR; CMP; SOI; Nickel Silicide; Wafer Bonding; Electronics; Elektronik; Elektronik; Electronics;

   Sammanfattning : In recent years there has been a huge increase in the growth of communication systems such as mobile phones, wireless local area networks (WLAN), satellite navigation and various other forms of wireless data communication that have made analogue frequency control a key issue. The increase in frequency spectrum crowding and the increase of frequency into microwave region, along with the need for minimisation and capacity improvement, has shown the need for the development of high performance, miniature, on-chip filters operating in the low to medium GHz frequency range. LÄS MER

3. 12. The influence of surface microroughness on wafer bonding

   Författare :Mats Bergh; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; AFM; hydrophilic; surface roughness; diamond; silicon-on-insulator; poly silicon; silicon-on-diamons; atomic force microscope; wafer bonding; SOI; aluminum nitride; hydrophobic;

   Sammanfattning : .... LÄS MER

4. 13. Fabrication, characterization, and modeling of metallic source/drain MOSFETs

   Författare :Valur Gudmundsson; Per-Erik Hellström; Yee-Chia Yeo; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Metallic source drain; contact resistivity; Monte Carlo; NiSi; PtSi; SOI; UTB; tri-gate; FinFET; multiple-gate; nanowire; MOSFET; CMOS; Schottky barrier; silicide; SALICIDE;

   Sammanfattning : As scaling of CMOS technology continues, the control of parasitic source/drain (S/D) resistance (RSD) is becoming increasingly challenging. In order to control RSD, metallic source/drain MOSFETs have attracted significant attention, due to their low resistivity, abrupt junction and low temperature processing (≤700 °C). LÄS MER

5. 14. La motivation et le concept de soi : Regards croisés de l'élève et de l'enseignant de français langue étrangère en Suède

   Författare :Céline Rocher Hahlin; Franska; []
   Nyckelord :SAMHÄLLSVETENSKAP; SOCIAL SCIENCES; HUMANIORA; HUMANITIES; HUMANIORA; HUMANITIES; Motivation; French; Language learning; Language teaching; Self Concept; Teacher psychology; Motivation; Språkinlärning; Franska; Språkundervisning; Självuppfattning; Motivation; Språkinlärning; Franska; Språkundervisning; Självuppfattning; French; Language learning; Language teaching; Self Concept; Teacher psychology;

   Sammanfattning : This thesis contains two studies focusing on motivation in learning and teaching French as a foreign language in Sweden. In the first study, the effect of three specifically designed pedagogical activities on learners’ Ideal French Self (IFrS) and Intended Effort (IE) was examined in a group of 15-year-old Swedish pupils. LÄS MER

7. 15. Device design and process integration for SiGeC and Si/SOI bipolar transistors

   Författare :Erik Haralson; KTH; []
   Nyckelord :Silicon-Germanium SiGe ; SiGeC; heterojunction bipolar transistor HBT ; nickel silicide; selectively implanted collector SIC ; device simulation; SiGeC layer staiblity; high resolution x-ray diffraction HRXRD ; silicon-on.insulator SOI ; self-heating;

   Sammanfattning : SiGe is a significant enabling technology for therealization of integrated circuits used in high performanceoptical networks and radio frequency applications. In order tocontinue to fulfill the demands for these applications, newmaterials and device structures are needed. LÄS MER