Sökning: "S-parameters characterisation"

Hittade 5 avhandlingar innehållade orden S-parameters characterisation.

1. 1. Graphene FETs in Microwave Applications

   Författare :Omid Habibpour; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; microwave amplifiers; S-parameters characterisation; device modelling; MMIC; device fabrication; Graphene; subharmonic resistive mixers; integrated circuits; harmonic balance analysis; microwave FETs;

   Sammanfattning : Graphene is a one-atom-thick sheet of carbon with numerous impressive properties. It is a promising material for future high-speed nanoelectronics due to its intrinsic superior carrier mobility and very high saturation velocity. LÄS MER

3. 2. Characterisation of terahertz integrated membrane circuits

   Författare :Johanna Hanning; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; waveguide width error; calibration; THz; membrane circuit; TRL; measurement uncertainty; single-flange 2-port; 220–325 GHz; cable flex; WR-03; VNA; S-parameter;

   Sammanfattning : In this thesis a novel measurement setup and thru-reflect-line (TRL) calibration kit for vector network analyser (VNA) measurements at 220 GHz to 325 GHz (WR-03) is presented. Measurements on passive membrane circuit devices under test (DUTs) show improvement in the S-parameters compared to a waveguide integrated membrane circuit setup in previous work, especially in reducing the ripples and increasing repeatability of the measurements. LÄS MER

4. 3. Modelling and Characterisation of Terahertz Planar Schottky Diodes

   Författare :Aik-Yean Tang; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

   Sammanfattning : This thesis deals with the modelling and characterisation of THz planar Schottky diodes, focusing on analyses of geometry-dependent electrical parasitics and the thermal management of the diode chip. Moving towards higher operating frequencies, the diode performance degrades due to high frequency losses, parasitic couplings and self-heating effects. LÄS MER

5. 4. Fabrication, Characterisation and Modelling of Subharmonic Graphene FET Mixers

   Författare :Omid Habibpour; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; gate dielectric; Graphene; harmonic balance analysis.; subharmonic resistive mixers; microwave FETs; device modelling;

   Sammanfattning : Graphene has exceptional carrier transport properties which makes it a promising material for future nanoelectronics. The high carrier mobility along with the ability to switch between n- and p-channel in a graphene field effect transistor (G-FET) truly distinguishes it from other types of FET technologies and enables completely new high frequency devices. LÄS MER

7. 5. Time and Frequency Domain Measurement Methods for High Frequency Characterisation of Power Cables

   Författare :Ruslan Papazyan; KTH; []
   Nyckelord :Attenuation measurement; XLPE insulation; Power cables;

   Sammanfattning : Time Domain Reflectometry (TDR) has been used forlocalisation of transmission line discontinuities in variousapplications. One of the challenges when applying TDR on powercables is to obtain knowledge of the high frequencycharacteristics of both the degraded and the undegradedsections of the cable. LÄS MER