Sökning: "Resonant double gate transistor"

Hittade 5 avhandlingar innehållade orden Resonant double gate transistor.

  1. 1. High resolution displacement measurement of micromechanical structures : the RDGT

    Författare :Anke Weinert; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; FET; capacitive detection; displacement measure; silicon; Resonant double gate transistor; high resolution; RGT; MOSFET; resonant gate transistor; low impedance sensing; RDGT;

    Sammanfattning : .... LÄS MER

  2. 2. Resonant Tunneling in Laterally Confined Quantum Structures

    Författare :Boel Gustafson; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; gravitation; relativity; quantum mechanics; classical mechanics; Mathematical and general theoretical physics; Fysik; Physics; High peak-to-valley ratio; Lateral confinement; Quantum dots; Resonant tunneling; Self-assembled quantum dots; Schottky depletion; Buried metal gate; Electron transport; Magnetic-field dependence; Energy level width; Tunneling transistors; Mode coupling; statistical physics; thermodynamics; Matematisk och allmän teoretisk fysik; klassisk mekanik; kvantmekanik; relativitet; statistisk fysik; termodynamik; Technological sciences; Teknik; Fysicumarkivet A:2001:Gustafson;

    Sammanfattning : In the thesis, three-dimensionally confined resonant tunneling structures were studied experimentally. Two approaches were used for obtaining quantum confinement: gate-defined lateral constriction of double barrier structures, and epitaxial growth of self-assembled quantum dots. LÄS MER

  3. 3. The RDGT - Integration of Micromechanics and Electronics by Plasma Assisted Wafer Bonding

    Författare :Anke Sanz-Velasco; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; bonding; displacement measurement; oxygen plasma; low temperature wafer bonding; capacitive detection; high resolution; CMOS compatibility; MOSFET; low impedance sensing; resonant gate transistor;

    Sammanfattning : A high-resolution capacitive sensing technique is presented in this thesis: the Resonant Double Gate Transistor (RDGT). The major advantage of the RDGT compared to "pure" capacitive sensing techniques is its low output impedance because of the direct capacitance to current conversion of the transistor. LÄS MER

  4. 4. Tunneling Based Electronic Devices

    Författare :Erik Lind; Institutionen för elektro- och informationsteknik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiGe; Esaki Diodes; classical mechanics; quantum mechanics; relativity; termodynamik; relativitet; kvantmekanik; statistisk fysik; Matematisk och allmän teoretisk fysik; thermodynamics; gravitation; statistical physics; GaAs; Mathematical and general theoretical physics; Resonant Tunneling Permeable Base Transistors; Resonant Tunneling Diodes; klassisk mekanik; Fysicumarkivet A:2004:Lind;

    Sammanfattning : This thesis concerns different kinds of tunneling based devices all showing negative differential resistance. The thesis is divided in three parts, resonant tunneling transistors, Esaki diodes and coupled zero dimensional systems. LÄS MER

  5. 5. Electron Transport in Semiconductor Nanowires

    Författare :Mikael Björk; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; heterostructures; single electron transistors; resonant tunneling; quantum dots; weak antilocalization; Halvledarfysik; field effect transistors; Semiconductory physics; Fysicumarkivet A:2004:Björk; Low-dimensional structures; nanowires; chemical beam epitaxy;

    Sammanfattning : In this thesis, semiconductor nanowires are studied from the point of view of growth and electrical properties. The growth of nanowires is done by chemical beam epitaxy (CBE), an ultra-high vacuum technique allowing a precise control of precursor deposition and low growth rates. LÄS MER