Sökning: "Reduced Pressure Chemical Vapor Deposition RPCVD"

Hittade 3 avhandlingar innehållade orden Reduced Pressure Chemical Vapor Deposition RPCVD.

  1. 1. Engineering Multicomponent Nanostructures for MOSFET, Photonic Detector and Hybrid Solar Cell Applications

    Författare :Asghar Jamshidi Zavaraki; Hans Ågren; Kevin J. Webb; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Epitaxial G rowth; Reduced Pressure Chemical Vapor Deposition; GeSnSiC; MOSFET; Photonic Detector; Resistivity; Phosp hor and Boron doping; Colloidal QDs Sensitized Solar Cell; Cd - free and Cd - based QDs; High Resolution Reciprocal Lattice Map; High Resolution X - Ray Diffraction; High Resolution Transmission Electron Microscopy; High resolution Scanning E lectron Microscopy .;

    Sammanfattning : Silicon technologyhas been seekingfor a monolithic solution for a chip where data processing and data communication is performed in the CMOS part and the photonic component, respectively. Traditionally, silicon has been widely considered for electronic applications but not for photonic applications due to its indirect bandgap nature. LÄS MER

  3. 2. Application of SiGe(C) in high performance MOSFETs and infrared detectors

    Författare :Mohammadreza Kolahdouz Esfahani; Henry Radamson; Ya-Hong Xie; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Germanium Carbon SiGeC ; Reduced Pressure Chemical Vapor Deposition RPCVD ; Epitaxy; Pattern Dependency; MOSFET; Mobility; bolometer; Quantum Well; Infrared IR Detection; Ni Silicide; High Resolution X-ray Diffraction HRXRD ; High Resolution Scanning Electron Microscopy HRSEM ; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik;

    Sammanfattning : Epitaxially grown SiGe(C) materials have a great importance for many device applications. In these applications, (strained or relaxed) SiGe(C) layers are grown either selectively on the active areas, or on the entire wafer. LÄS MER

  4. 3. SiGeC Heterojunction Bipolar Transistors

    Författare :Erdal Suvar; KTH; []
    Nyckelord :Silicon-Germanium-Carbon SiGeC ; Heterojunction bipolar transistor HBT ; chemical vapor deposition CVD ; selective epitaxy; non-selective epitaxy; collector design; high-frequency measurement; dopant segregation; thermal stability;

    Sammanfattning : Heterojunction bipolar transistors (HBT) based on SiGeC havebeen investigated. Two high-frequency architectures have beendesigned, fabricated and characterized. Different collectordesigns were applied either by using selective epitaxial growthdoped with phosphorous or by non-selective epitaxial growthdoped with arsenic. LÄS MER