Sökning: "Random Telegraph Noise"

Hittade 5 avhandlingar innehållade orden Random Telegraph Noise.

1. 1. Electrical Characterisation of III-V Nanowire MOSFETs

   Författare :Markus Hellenbrand; Institutionen för elektro- och informationsteknik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; TFET; III-V; Nanowire; Hysteresis; Low-Frequency Noise; Random Telegraph Noise; cryogenic; Reliability; Radio Frequency; Small-Signal Model;

   Sammanfattning : The ever increasing demand for faster and more energy-efficient electricalcomputation and communication presents severe challenges for the semiconductor industry and particularly for the metal-oxidesemiconductorfield-effect transistor (MOSFET), which is the workhorse of modern electronics. III-V materials exhibit higher carrier mobilities than the most commonly used MOSFET material Si so that the realisation of III-V MOSFETs can enable higher operation speeds and lower drive voltages than that which is possible in Si electronics. LÄS MER

3. 2. Photoluminescence Studies of Single Quantum Dots

   Författare :Nikolay Panev; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Stranski-Krastanow; photoluminescence; laser spectroscopy; antibunching; random telegraph noise; blinking; Physics; Fysik; Fysicumarkivet A:2004:Panev; solid immersion lens; quantum dots; low-dimensional structures;

   Sammanfattning : This thesis presents photoluminescence (PL) spectroscopy studies of single III-V semiconductor quantum dots (QDs). The electronic properties of the QDs, as well as, the dynamics of the processes taking part inside and in the surroundings of the QDs have been studied by single quantum dot photoluminescence spectroscopy, time resolved spectroscopy, and correlation spectroscopy. LÄS MER

4. 3. Fabrication, functionalization and electrical conductance modulation of nanoparticle based molecular electronic Nano-devices

   Författare :Ishtiaq Hassan Wani; KLAUS LEIFER; Silvia Karthäuser; Uppsala universitet; []
   Nyckelord :Molecular electronics; gas sensor; hybrid materials; place exchange; random telegraph signal;

   Sammanfattning : Over the years many techniques have been proposed for the purpose of the formation of electrically conducting metal-molecule-metal junctions. One such technique utilizes gold-nanoparticles (AuNPs) that could assist in contacting small molecules between large gaps. LÄS MER

5. 4. Vertical III-V Nanowire Tunnel Field-Effect Transistor

   Författare :Elvedin Memisevic; Nanoelektronik; []
   Nyckelord :Transistor; TFET; Steep slope; Nanowire; III-V materials; HSQ; Vertical; InAs; GaSb; MOSFET;

   Sammanfattning : In this thesis fabrication and optimization of vertical III-V Tunneling Field-Effect transistors was explored. Usage of vertical nanowires, allows for combination of materials with large lattice mismatch in the same nanowire structure. LÄS MER

7. 5. Ferroelectric Memristors - Materials, Interfaces and Applications

   Författare :Robin Athle; Institutionen för elektro- och informationsteknik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; neuromorphic computing; Hafnium oxide; Memristor; Ferroelectric;

   Sammanfattning : The backbone of modern computing systems rely on two key things: logic and memory, and while computing power hasseen tremendous advancements through scaling of the fundamental building block – the transistor, memory access hasn’tevolved as rapidly, leading to significant memory-bound systems. Additionally, the rapid evolution of machine learningand deep neural network (DNN) applications, has exposed the fundamental limitations of the traditional von Neumanncomputing architecture, due to its heavy reliance on memory access. LÄS MER