Sökning: "RF transistor"

Visar resultat 1 - 5 av 61 avhandlingar innehållade orden RF transistor.

  1. 1. Vertical InAs Nanowire Devices and RF Circuits

    Författare :Martin Berg; Institutionen för elektro- och informationsteknik; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; Metal-oxide-semiconductor field-effect transistor; Transistor; Vertical; InAs; III-V semiconductor; Nanowire; Fabrication; DC; Resistor; TLM; RF; Mixer; Circuit.;

    Sammanfattning : Recent decades have seen an exponential increase in the functionality of electronic circuits, allowing for continuous innovation, which benefits society. This increase in functionality has been facilitated by scaling down the dimensions of the most important electronic component in modern electronics: the Si-based MOSFET. LÄS MER

  3. 2. High Frequency Analysis of Silicon RF MOS Transistors

    Författare :Johan Ankarcrona; Jörgen Olsson; Kjell Jeppson; Uppsala universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; RF-power; LDMOS; Microwave transistor; SOI; Silicon; MOSFET; Elektronik; Electronics; Elektronik;

    Sammanfattning : Today, the silicon technology is well established for RF-applications (f~1-100 GHz), with emphasis on the lower frequencies (f < 5 GHz). The field of RF power devices is extensive concerning materials and devices. One of the important RF-devices is the silicon LDMOS transistor. LÄS MER

  4. 3. InAs Nanowire Devices and Circuits

    Författare :Kristofer Jansson; Institutionen för elektro- och informationsteknik; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Modelling; Circuit; Simulation; Ballistic; Capacitor; Transistor; RF; Band structure; III-V semiconductor; InAs; MOSFET; Metal-oxide-semiconductor field-effect transistor; Nanowire; Amplifier;

    Sammanfattning : Since the introduction of the transistor and the integrated circuit, the semiconductor industry has developed at a remarkable pace. By continuously fabricating smaller and faster transistors, it has been possible to maintain an exponential increase in performance, a phenomenon famously described by Moore’s Law. LÄS MER

  5. 4. Noise Properties of the Single Electron Transistor

    Författare :Serguei Kafanov; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Low-Frequency noise; Shot Noise; 1 f noise; Single Electron Transistor; charge sensitivity; SET; electrometer; Coulomb blockade; radio-frequency Single Electron Transistor; RF-SET;

    Sammanfattning : The Single Electron Transistor (SET) is a sensitive electrometer with a charge sensitivityultimately limited by noise. In this thesis we present measurements of noiseproperties and charge sensitivity of the radio-frequency Single Electron Transistor. LÄS MER

  7. 5. Nanowire Transistors and RF Circuits for Low-Power Applications

    Författare :Karl-Magnus Persson; Institutionen för elektro- och informationsteknik; []
    Nyckelord :InAs; Nanowire; Metal-oxide-semiconductor field-effect transistor; MOSFET; RF; Mixer; Circuit; 1 f-noise; Simulation; Modelling;

    Sammanfattning : The background of this thesis is related to the steadily increasing demand of higher bandwidth and lower power consumption for transmitting data. The work aims at demonstrating how new types of structures, at the nanoscale, combined with what is referred to as exotic materials, can help benefit in electronics by lowering the consumed power, possibly by an order of magnitude, compared to the industry standard, silicon (Si), used today. LÄS MER