Sökning: "Power semiconductor devices"

Visar resultat 1 - 5 av 117 avhandlingar innehållade orden Power semiconductor devices.

  1. 1. Waste-heat Recovery Using Thermoelectricity and Silicon Carbide Power Electronics

    Detta är en avhandling från KTH Royal Institute of Technology

    Författare :Arash Edvin Risseh; KTH.; [2019]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Thermoelectricity; Power converter; Silicon Carbide; MOSFET; Power management; Thermoelectric generator; Renewable energy; Vehicle; Power electronic; Waste heat; Ultra-low inductance; Power module; Termoelektrisk energiomvandling; Kiselkarbid MOSFET; Effektomvandlare; Förnybar energikälla; Effektelektronik; Spillvärme; Effektmodul; Låg induktiv module; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : Energy consumption in the world has increased continuously due to a growing population and increased energy consumption per capita. Moreover, the largest part of consumed energy still comes from fossil sources which in 2016 was more than 130 PWh. LÄS MER

  2. 2. On Gate Drivers for MOS-Controlled Power Devices and dv-dt Filters for Train Traction Converters

    Detta är en avhandling från Stockholm : KTH Royal Institute of Technology

    Författare :Erik Velander; KTH.; [2017]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Power semiconductor devices; DC-AC power converters; Silicon carbide; Insulated gate bipolar transistors; P-i-n diodes; Schottky diodes; Traction motors; Power MOSFET; Krafthalvledare; DC-AC kraftomvandlare; kiselkarbid; IGBT; P-i-n dioder; Schottky dioder; traktionsmotorer; Effekt-MOSFET; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : In this thesis, low-loss gate-drive solutions and a proposed dv/dt-filter have been investigated with focus on train traction converters with dv/dt constraints.By using the silicon carbide (SiC) junction field-effect transistor (JFET), the switching losses can be significantly reduced compared to the commonly used insulated-gate bipolar transistor (IGBT), but complex gate-driver solutions are required for high utilization in terms of loss reduction. LÄS MER

  3. 3. On Reliability of SiC Power Devices in Power Electronics

    Detta är en avhandling från Stockholm : KTH Royal Institute of Technology

    Författare :Diane-Perle Sadik; KTH.; [2017]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; Metal-Oxide-Semiconductor Field-Effect Transistor MOSFET ; Junction Field-Effect Transistor JFET ; Bipolar Junction Transistor BJT ; Reliability; Failure Analysis; Reliability Testing; Short- Circuit Currents; Humidity; Resonant converter; Series-resonant converter SLR ; Base drive circuits; Gate drive circuits; Life-Cycle Cost Analysis LCCA ; Kiselkarbid; MOSFETar; JFETar; Bipolär Junction Transistor BJT ; Tillförlitlighet; Robusthet; Felanalys; Tillförlitlighetstestning; Kortslutningsströmmar; Luftfuktighet; Resonansomvandlare; Serie-resonansomvandlare SLR ; Basdrivkretsar; Gate-drivkretsar; Felskydd; Livscykelkostnadsanalys; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1. LÄS MER

  4. 4. Modelling and design of high-power HBV multipliers

    Detta är en avhandling från Stockholm : KTH Royal Institute of Technology

    Författare :Mattias Ingvarson; [2004]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; thermal limitations; semiconductor; millimetre and sub-millimetre wave power source; varactor diode; frequency multiplier; heterostructure barrier varactor;

    Sammanfattning : This thesis deals with symmetric varactor frequency multipliers for millimetre and sub-millimetre wave applications. Much of the material presented is general and applicable to any type of (symmetric) varactor, but the focus is on the heterostructure barrier varactor (HBV). The basic function and principles of HBVs are explained. LÄS MER

  5. 5. Investigations of interior electrical properties in power semiconductor devices

    Detta är en avhandling från Uppsala : Acta Universitatis Upsaliensis

    Författare :Mats Rosling; Uppsala universitet.; [1992]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURAL SCIENCES; NATURVETENSKAP;

    Sammanfattning : .... LÄS MER