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  1. 1. GaN HEMT Low Noise Amplifiers for Radio Base Station Receivers

    Författare :Pirooz Chehrenegar; Chalmers University of Technology; []
    Nyckelord :gallium nitride GaN ; radio base station receiver; cascode; high linearity; robustness.; cascade; high electron mobility transistor HEMT ; low noise; low noise amplifier;

    Sammanfattning : Gallium nitride (GaN) high electron mobility transistor (HEMT) has been introduced as the technology of choice for high power microwave applications due to its material properties including high saturation electron velocity and breakdown field together with excellent thermal conductivity and robustness.It is also a promising candidate for receiver front-ends in the radio base station(RBS) where low noise figure and high linearity are key issues for low noiseamplifier (LNA) design. LÄS MER