Sökning: "Per-Erik Hellström"
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10 avhandlingar innehållade orden Per-Erik Hellström.
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Författare :Valur Gudmundsson; Per-Erik Hellström; Yee-Chia Yeo; KTH; []
Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Metallic source drain; contact resistivity; Monte Carlo; NiSi; PtSi; SOI; UTB; tri-gate; FinFET; multiple-gate; nanowire; MOSFET; CMOS; Schottky barrier; silicide; SALICIDE;
Sammanfattning :
As scaling of CMOS technology continues, the control of parasitic source/drain (S/D) resistance (RSD) is becoming increasingly challenging. In order to control RSD, metallic source/drain MOSFETs have attracted significant attention, due to their low resistivity, abrupt junction and low temperature processing (≤700 °C). LÄS MER
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Författare :Shuoben Hou; Mikael Östling; Carl-Mikael Zetterling; Per-Erik Hellström; Anthony O'Neill; KTH; []
Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide SiC ; high temperature; photodetector; photodiode; phototransistor; ultraviolet UV ; transistor-transistor logic TTL ; bipolar junction transistor BJT ; integrated circuit IC ; pixel sensor; image sensor; Informations- och kommunikationsteknik; Information and Communication Technology;
Sammanfattning :
Silicon Carbide (SiC) has the advantages of ultraviolet (UV) sensing and high temperature characteristics because of its wide band gap. Both merits make SiC photodetectors very attractive in astronomy, oil drilling, combustion detection, biology and medical applications. LÄS MER
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Författare :Ganesh Jayakumar; Per-Erik Hellström; Mikael Östling; Luca Selmi; KTH; []
Nyckelord :silicon nanowire; biosensor; CMOS; sequential integration; lab-on-chip; LOC; high-K; high-K integration on SiNW biosensor; ALD; fluid gate; back gate; SiNW; SiNW pixel matrix; FEOL; pattern transfer lithography; sidewall transfer lithography; STL; multi-target bio detection; BEOL; nanonets; silicon nanonets; SiNN-FET; SiNW-FET; CMOS integration of nanowires; CMOS integration of nanonets; monolithic 3D integration of nanowires; above-IC integration of nanowires; DNA detection using SiNW; SiNW biosensor; dry environment DNA detection; DNA hybridization detection using SiNW; SiNW functionalization; SiNW silanization; SiNW grafting; FEOL integration of SiNW; BEOL integration of SiNW; sequential multiplexed biodetection; biodetection efficiency of SiNW; front end of line integration of SiNW; back end of line integration of SiNW; SiNW dry environment functionalization; APTES cross-linker; accessing SiNW test site; fluorescence microscopy of SiNW; geometry of SiNW; SiNW biosensor variability; top-down fabrication of SiNW; bottom-up fabrication of SiNW; VLS method; ams foundry CMOS process; adding functionality in BEOL process; sensor integration in BEOL process; hafnium oxide; HfO2; aluminium oxide; Al2O3; TiN backgate; Nickel source drain; ISFET; ion sensitive field effect transistor; Overcoming Nernst limit of detection using SiNW; SiNW sub-threshold region operation; ASIC; SOC; SiGe selective epitaxy; epitaxial growth of SiNW; epitaxial growth of nanowires; epitaxial growth of nanonets; nickel silicide contacts; salicide process; high yield SiNW fabrication; high volume SiNW fabrication; silicon ribbon; SiRi pixel; SiRi biosensor; SiRi DNA detection; monolithic 3D integration of nanonets; above-IC integration of nanonets; impact of back gate voltage on silicon nanowire; impact of back gate voltage on SiNW; FDSOI; fully depleted silicon on insulator technology; metal backgate; wafer scale integration of SiNW; wafer scale integration of nanonets; impact of backgate voltage on CMOS inverter circuit; frequency divider; D flip-flop; Informations- och kommunikationsteknik; Information and Communication Technology;
Sammanfattning :
Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. LÄS MER
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Författare :David Ramos Santesmases; Per-Erik Hellström; Sanjay Krishna; KTH; []
Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; infrared detectors; Type-II superlattice; surface leakage; high operating temperature; passivation; optical concentration; modulation transfer function; noise.; infraröda detektorer; Typ-II supergitter; ytströmmar; hög arbetstemperatur; passivering; optisk koncentration; moduleringsöverföringsfunktion; brus; Informations- och kommunikationsteknik; Information and Communication Technology;
Sammanfattning :
Type-II Superlattice (T2SL) detectors have revolutionized the field of infraredimaging, establishing themselves as the forefront technology in defense, space,and industrial applications. These detectors enable larger formats and higheroperating temperatures (HOT) that minimize the need for bulky and energyconsumingcryogenic cooling, paving the way for imaging systems with reducedSize, Weight, and Power (SWaP). LÄS MER
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Författare :Laura Zurauskaite; Per-Erik Hellström; Mikael Östling; Francois Andrieu; KTH; []
Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Germanium; high-k; monolithic; 3D; germanium on insulator; GOI; germanium oxide; GeOx; Si-cap; Si-passivation; interface state density; Dit; low temperature; MOSFET; germanium; hög-permittivitetsdielektrika; monolitisk; 3D; germaniumpå- isolator; GOI; germaniumoxid; GeOx; kiselskikt; kiselpassivering; gränssnittsfälltäthet; Dit; låg temperatur; MOSFET; Informations- och kommunikationsteknik; Information and Communication Technology;
Sammanfattning :
Continuous scaling of transistor dimensions has been in the heart of semiconductorindustry for many years. Recently the scaling has been enabled by various performance boosters which resulted in increased processing complexity and cost, forcing the chip manufacturers to look for some alternative solutions. LÄS MER
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