Sökning: "P-i-n diodes"

Visar resultat 1 - 5 av 6 avhandlingar innehållade orden P-i-n diodes.

  1. 1. On Gate Drivers for MOS-Controlled Power Devices and dv-dt Filters for Train Traction Converters

    Detta är en avhandling från Stockholm : KTH Royal Institute of Technology

    Författare :Erik Velander; KTH.; [2017]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Power semiconductor devices; DC-AC power converters; Silicon carbide; Insulated gate bipolar transistors; P-i-n diodes; Schottky diodes; Traction motors; Power MOSFET; Krafthalvledare; DC-AC kraftomvandlare; kiselkarbid; IGBT; P-i-n dioder; Schottky dioder; traktionsmotorer; Effekt-MOSFET; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : In this thesis, low-loss gate-drive solutions and a proposed dv/dt-filter have been investigated with focus on train traction converters with dv/dt constraints.By using the silicon carbide (SiC) junction field-effect transistor (JFET), the switching losses can be significantly reduced compared to the commonly used insulated-gate bipolar transistor (IGBT), but complex gate-driver solutions are required for high utilization in terms of loss reduction. LÄS MER

  2. 2. Photo diodes for machine vision : device characteristics and a-Si:H deposition and analysis

    Detta är en avhandling från Linköping : Linköping studies in science and technology

    Författare :Annika Rantzer; Linköpings universitet.; Linköpings universitet.; [2003]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TECHNOLOGY; TEKNIKVETENSKAP;

    Sammanfattning : During the last years the area of digital cameras based on CMOS technology has grown rapidly. In CMOS, signal processing circuitry and sensor elements can be combined on the same chip, which has resulted in advanced machine vision chip designs. LÄS MER

  3. 3. Junction Engineering in Nanostructured Optoelectronic Devices

    Detta är en avhandling från Division of Solid State Physics, Lund University, P.O. Box 118, S-221 00 Lund, Sweden

    Författare :Ali Nowzari; Lund University.; Lunds universitet.; Lund University.; Lunds universitet.; [2018-09-18]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; Solar cell; Photodetector; Light Emitting Diode; Doping Evaluation; Fysicumarkivet A:2018:Nowzari;

    Sammanfattning : Semiconductor nanowires have proven to be promising building blocks for next-generation optoelectronic devices. The nanometric dimensions of nanowires provides strain relaxation capability, thus enabling the heteroepitaxy of III-V materials on silicon, as well as providing the possibility of realizing optoelectronic devices with lattice-mismatched material combinations. LÄS MER

  4. 4. Doping of Semiconductor Nanowires

    Detta är en avhandling från Lund University

    Författare :Jesper Wallentin; Lund University.; Lunds universitet.; Lund University.; Lunds universitet.; [2012]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; metal-organic vapour phase epitaxy; III-V semiconductor materials; nanowires; doping; solar cells; F:2013:Wallentin;

    Sammanfattning : In this thesis, in situ doping during growth of III-V semiconductor nanowires, primarily for photovoltaic applications, is investigated. The nanowires were grown by metalorganic vapor phase epitaxy (MOVPE), with gold seed particles. LÄS MER

  5. 5. Investigation of GaAs structures for microstrip detectors

    Detta är en avhandling från Stockholm : Fysik

    Författare :Valery Chmill; KTH.; [2003]
    Nyckelord :;

    Sammanfattning : The performance of Gallium Arsenide p-i-n detectors afterneutron irradiation has been studied. The detectors have beenirradiated with » 6 MeV neutrons at various neutronfluences up to approximately 6 ¢ 1014 n/cm2, protons andmixed beam up to 1015 p/cm2. LÄS MER