Sökning: "Optoelectronic properties"

Visar resultat 1 - 5 av 110 avhandlingar innehållade orden Optoelectronic properties.

  1. 1. Low-Coordinate Organopnictogens : Synthesis and Optoelectronic properties

    Författare :Muhammad Anwar Shameem; Andreas Orthaber; Roland Christian Fischer; Uppsala universitet; []
    Nyckelord :Pnictogen; phosphorus; arsenic; phosphaalkenes; arsaalkenes; phospholes; arsoles; alkynes; π-conjugation; PAHs; Fullerene-C60; sumanene; truxene; organic electronics;

    Sammanfattning : This thesis work is based on the development of novel organopnictogen compounds and the exploration of their potential applications in organic electronics. In particular, incorporation of phosphorus and arsenic into π-conjugated systems is known to modify the optoelectronic properties. LÄS MER

  2. 2. Synthesis and Characterization of Carbon Based One-Dimensional Structures : Tuning Physical and Chemical Properties

    Författare :HamidReza Barzegar; Thomas Wågberg; Hans Kuzmany; Umeå universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Carbon Nanotube; single-walled carbon nanotube; nitrogen doped; chemical vapor deposition; fullerene; hybrid structures; nanomaterials; nanomaterial;

    Sammanfattning : Carbon nanostructures have been extensively used in different applications; ranging from electronic and optoelectronic devices to energy conversion. The interest stems from the fact that covalently bonded carbon atoms can form a wide variety of structures with zero-, one- and two-dimensional configuration with different physical properties. LÄS MER

  3. 3. Novel architectured, dislocation-free, III-Nitride structures for the next generation optoelectronic devices

    Författare :Maryam Khalilian; NanoLund: Centre for Nanoscience; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; III-Nitride materials; heteroepitaxy; 3D growth mode; optoelectronic devices; Fysicumarkivet A:2019:Khalilian;

    Sammanfattning : III-Nitride (III-N) materials are promising building blocks of optoelectronic devices such as light emitting diode and laser diode due to the unique material properties. Furthermore, direct and tunable band gaps of III-N materials enable them to cover the entire visible-UV region of electromagnetic spectrum for device applications. LÄS MER

  4. 4. Junction Engineering in Nanostructured Optoelectronic Devices

    Författare :Ali Nowzari; NanoLund: Centre for Nanoscience; []
    Nyckelord :Nanowire; Solar cell; Photodetector; Light Emitting Diode; Doping Evaluation; Fysicumarkivet A:2018:Nowzari;

    Sammanfattning : Semiconductor nanowires have proven to be promising building blocks for next-generation optoelectronic devices. The nanometric dimensions of nanowires provides strain relaxation capability, thus enabling the heteroepitaxy of III-V materials on silicon, as well as providing the possibility of realizing optoelectronic devices with lattice-mismatched material combinations. LÄS MER

  5. 5. Magnetooptical properties of dilute nitride nanowires

    Författare :Mattias Jansson; Irina A Buyanova; Weimin Chen; Jan Eric Stehr; Hannah Joyce; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : Nanostructured III-V semiconductors have emerged as one of the most promising materials systems for future optoelectronic applications. While planar III-V compounds are already at the center of the ongoing lighting revolution, where older light sources are replaced by modern white light LEDs, fabricating such materials in novel architectures, such as nanowires and quantum dots, creates new possibilities for optoelectronic applications. LÄS MER