Sökning: "Optimering på låg nivå"

Hittade 3 avhandlingar innehållade orden Optimering på låg nivå.

  1. 1. Realizing Low-Latency Internet Services via Low-Level Optimization of NFV Service Chains Every nanosecond counts!

    Detta är en avhandling från Stockholm : KTH Royal Institute of Technology

    Författare :Alireza Farshin; KTH.; [2019]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Low-latency Internet services; Network Function Virtualization; Low-level Optimization; Superoptimization; Last Level Cache; Internettjänster med låg fördröjning; Virtualisering av nätverksfunktioner; Optimering på låg nivå; Superoptimering; Sista-nivåns cache; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : By virtue of the recent technological developments in cloud computing, more applications are deployed in a cloud. Among these modern cloud-based applications, some require bounded and predictable low-latency responses. LÄS MER

  2. 2. On Gate Drivers for MOS-Controlled Power Devices and dv-dt Filters for Train Traction Converters

    Detta är en avhandling från Stockholm : KTH Royal Institute of Technology

    Författare :Erik Velander; KTH.; [2017]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Power semiconductor devices; DC-AC power converters; Silicon carbide; Insulated gate bipolar transistors; P-i-n diodes; Schottky diodes; Traction motors; Power MOSFET; Krafthalvledare; DC-AC kraftomvandlare; kiselkarbid; IGBT; P-i-n dioder; Schottky dioder; traktionsmotorer; Effekt-MOSFET; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : In this thesis, low-loss gate-drive solutions and a proposed dv/dt-filter have been investigated with focus on train traction converters with dv/dt constraints.By using the silicon carbide (SiC) junction field-effect transistor (JFET), the switching losses can be significantly reduced compared to the commonly used insulated-gate bipolar transistor (IGBT), but complex gate-driver solutions are required for high utilization in terms of loss reduction. LÄS MER

  3. 3. Advances in SiC growth using chloride-based CVD

    Detta är en avhandling från Linköping : Linköping University Electronic Press

    Författare :Stefano Leone; Linköpings universitet.; Linköpings universitet.; [2010]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURAL SCIENCES; NATURVETENSKAP;

    Sammanfattning : Silicon Carbide (SiC) is a wide band-gap semiconductor. Similar to silicon it can be used to make electronic devices which can be employed in several applications. SiC has some unique features, such as wide band-gap, high hardness, chemical inertness, and capability to withstand high temperatures. LÄS MER