Sökning: "Ohmic contacts"

Visar resultat 1 - 5 av 19 avhandlingar innehållade orden Ohmic contacts.

  1. 1. Electrical contacts, Ohmic and Schottky, to 4H-Silicon Carbide for device applications

    Detta är en avhandling från Stockholm : Elektrotekniska system

    Författare :Sang-Kwon Lee; KTH.; [2000]
    Nyckelord :silicon carbice; Ohmic; Schottky contacts; co-evaporation; current-voltage; capacitance-voltage measurement; power device; 4H-SiC; TLM;

    Sammanfattning : .... LÄS MER

  2. 2. Ohmic Contacts and Thin Film Resistors for GaN MMIC Technologies

    Detta är en avhandling från Stockholm : Elektrotekniska system

    Författare :Anna Malmros; [2011]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ohmic contact; TFR; TiN; HEMT; GaN; TaN;

    Sammanfattning : Gallium nitride (GaN) based high electron mobility transistor (HEMT) technology has attracted much attention during the last decade which has resulted in a rapid development in material quality and device performance. GaN HEMT microwave electronics are currently finding its applications in wireless communication infrastructure and radar systems. LÄS MER

  3. 3. Tailoring of Contacts on Silicon Carbide - Procedures and Mechanisms

    Detta är en avhandling från Stockholm : Elektrotekniska system

    Författare :S. A. Perez-Garcia; [2007]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; interfacial reaction; metallic contacts; Silicon carbide; silicides; XPS.;

    Sammanfattning : Silicon carbide (SiC) exhibits very good electrical, thermal, chemical and mechanical properties which make it suitable for the next generation of wide band gap electronic devices, where silicon (Si) cannot be used due to its limitations with respect to the mentioned properties. Nickel (Ni) and Tantalum (Ta) are among the metals used for the contact formation. LÄS MER

  4. 4. Ohmic Contacts for High Temperature Integrated Circuits in Silicon Carbide

    Detta är en avhandling från Stockholm : KTH Royal Institute of Technology

    Författare :Katarina Smedfors; KTH.; [2014]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : In electrical devices and integrated circuits, ohmic contacts are necessary and a prerequisite for the current transport over the metal-semiconductor junctions. At the same time, a desired property of the ohmic contacts is to not add resistance or in other way disturb the performance. LÄS MER

  5. 5. Advanced Heterostructure Designs and Recessed Ohmic Contacts for III-Nitride-Based HEMTs

    Detta är en avhandling från Stockholm : KTH Royal Institute of Technology

    Författare :Johan Bergsten; [2015]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : Modern III-Nitride (III-N) heterostructures offer high mobility, high electron density, large breakdown voltages and good thermal capabilities. High electron mobility transistors (HEMT) based on III-Ns are therefore ideal for high frequency, high power amplification. The intended applications are within radar and mobile communication. LÄS MER