Sökning: "Nitride"

Visar resultat 1 - 5 av 328 avhandlingar innehållade ordet Nitride.

  1. 1. Carbon Nitride : Characterization and Protein Interactions

    Författare :Torun Berlind; Hans Arwin; Pentti Tengvall; Hans Hultman; Thomas E. Tiwald; Linköpings universitet; []
    Nyckelord :NATURAL SCIENCES; NATURVETENSKAP;

    Sammanfattning : This thesis concerns synthesis and characterization of carbon-based materials and theinvestigation of the possible use, of a selection of these materials, in biomedicalapplications. Protein adsorption and blood plasma tests were used for this purposeutilizing a surface sensitive technique called spectroscopic ellipsometry. LÄS MER

  3. 2. Accident-tolerant uranium nitride

    Författare :Aneta Herman; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; accident-tolerant fuel; uranium nitride; chromium; glucose; internal sol-gel;

    Sammanfattning : After the nuclear accident at Fukushima-Daiichi in 2011, a search for alternatives to a current fuel-clad standard UO2-Zircaloy was encouraged by government and industry and novel fuel-clad systems were selected. These systems are often referred to as Accident Tolerant systems, because of an improved response to severe accidents. LÄS MER

  4. 3. Investigation of Novel Metal Gate and High-κ Dielectric Materials for CMOS Technologies

    Författare :Jörgen Westlinder; Jörgen Olsson; Stefan Bengtsson; Uppsala universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; metal gate; high-κ dielectics; titanium nitride; zirconium nitride; MOSFET; thin film; tantalum oxide; aluminum nitride; Elektronik; Electronics; Elektronik;

    Sammanfattning : The demands for faster, smaller, and less expensive electronic equipments are basically the driving forces for improving the speed and increasing the packing density of microelectronic components. Down-scaling of the devices is the principal method to realize these requests. LÄS MER

  5. 4. Processing, Characterization and Modeling of AlGaN/GaN HEMTs

    Författare :Vincent Desmaris; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN; HEMT; III-Nitride processing; microwave modeling; AlGaN GaN; HFET; heterojunction field effect transistor; microwave devices; III-Nitride; Schottky diodes; Gallium nitride; resistive mixer; high electron mobility transistor; wide bandgap;

    Sammanfattning : III-Nitrides electronic properties make them currently the materials of choice for high-power high-frequency applications. Their wide bandgaps, high breakdown fields, the high electron peak and saturation velocities combined with the large conduction band offset and the high electron mobility observed in AlGaN/GaN heterostructures enable excellent microwave power performance of AlGaN/GaN high electron mobility transistors (HEMTs). LÄS MER

  7. 5. Silicon nitride based coatings for biomedical implants

    Författare :Charlotte Skjöldebrand; Cecilia Persson; Håkan Engqvist; Julia Shelton; Uppsala universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon nitride; ceramic coating; deposition; PVD; dissolution; biocompatibility;

    Sammanfattning : Silicon nitride-based coatings have been proposed as a means to reduce the release of metal ions and debris from metallic implants. This reduction in combination with the biocompatible debris from silicon nitride could result in a less adverse immune response. LÄS MER