Sökning: "Ni Silicide"

Visar resultat 1 - 5 av 15 avhandlingar innehållade orden Ni Silicide.

1. 1. Integration of silicide nanowires as Schottky barrier source/drain in FinFETs

   Författare :Zhen Zhang; Shi-Li Zhang; Tsu-Jae King Liu; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CMOS technology; MOSFET; FinFET; Schottky diode; Schottky barrier soure drain; silicide; SALICIDE; SOI; multiple-gate; nanowire; sidewall transfer lithography; Electronics; Elektronik;

   Sammanfattning : The steady and aggressive downscaling of the physical dimensions of the conventional metal-oxide-semiconductor field-effect-transistor (MOSFET) has been the main driving force for the IC industry and information technology over the past decades. As the device dimensions approach the fundamental limits, novel double/trigate device architecture such as FinFET is needed to guarantee the ultimate downscaling. LÄS MER

3. 2. Synthesis and In Situ ToF-LEIS Analysis of Ultrathin Silicides and Ti-based Films

   Författare :Philipp Mika Wolf; Daniel Primetzhofer; Zhen Zhang; Eduardo Pitthan; Tuan Thien Tran; Anders Hallén; Uppsala universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; ion scattering; in situ characterization; nickel silicide; ultrathin metal silicide; epitaxial silicide; surface analysis; titanium based films; high-resolution depth profiling;

   Sammanfattning : Thin films and coatings play a significant role in today’s society, with applications in electronics, optics, mechanics, and biomedicine. Further advancement in the field of surface coatings requires a good understanding of the unique features of ultrathin films and surfaces, which can only be reached with analysis techniques capable of resolving composition and morphology on a sub-nm scale. LÄS MER

4. 3. Role of alloying elements in Mo5Si3 intermetallics

   Författare :Erik Ström; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; microhardness; silicide; alloying; ternary; intermetallic; Laves; hardness; high temperature material; Mo5Si3;

   Sammanfattning : The role of alloying elements in the intermetallic compound Mo5Si3 was studied in the alloying systems Mo5-xMxSi3 (M = Cr, Ti, Nb, Ni, or Co, x = 0.5-2). The effects of the alloying elements were examined by characterising the microstructures and identifying the resulting phases. In the case of Cr and Nb alloying, a solubility of 25% (at. LÄS MER

5. 4. Source and drain engineering in SiGe-based pMOS transistors

   Författare :Christian Isheden; Mikael Östling; Simon Deleonibus; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; SiGe; source drain; shallow junctions; pMOS; process integration; CVD; epitaxy; etching; Ni silicide; contact resistivity; Elektronik; Electronics; Elektronik;

   Sammanfattning : A new shallow junction formation process, based on selective silicon etching followed by selective growth of in situ B-doped SiGe, is presented. The approach is advantageous compared to conventional ion implantation followed by thermal activation, because perfectly abrupt, low resistivity junctions of arbitrary depth can be obtained. LÄS MER

7. 5. Application of SiGe(C) in high performance MOSFETs and infrared detectors

   Författare :Mohammadreza Kolahdouz Esfahani; Henry Radamson; Ya-Hong Xie; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Germanium Carbon SiGeC ; Reduced Pressure Chemical Vapor Deposition RPCVD ; Epitaxy; Pattern Dependency; MOSFET; Mobility; bolometer; Quantum Well; Infrared IR Detection; Ni Silicide; High Resolution X-ray Diffraction HRXRD ; High Resolution Scanning Electron Microscopy HRSEM ; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik;

   Sammanfattning : Epitaxially grown SiGe(C) materials have a great importance for many device applications. In these applications, (strained or relaxed) SiGe(C) layers are grown either selectively on the active areas, or on the entire wafer. LÄS MER