Sökning: "NATURVETENSKAP Fysik Kondenserade materiens fysik Halvledarfysik"

Visar resultat 21 - 25 av 44 avhandlingar innehållade orden NATURVETENSKAP Fysik Kondenserade materiens fysik Halvledarfysik.

1. 21. Electron Transport in Semiconductor Nanowires

   Författare :Mikael Björk; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; heterostructures; single electron transistors; resonant tunneling; quantum dots; weak antilocalization; Halvledarfysik; field effect transistors; Semiconductory physics; Fysicumarkivet A:2004:Björk; Low-dimensional structures; nanowires; chemical beam epitaxy;

   Sammanfattning : In this thesis, semiconductor nanowires are studied from the point of view of growth and electrical properties. The growth of nanowires is done by chemical beam epitaxy (CBE), an ultra-high vacuum technique allowing a precise control of precursor deposition and low growth rates. LÄS MER

3. 22. Vertical III-V Semiconductor Devices

   Författare :Tomas Bryllert; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Halvledarfysik; Semiconductory physics; heterostructure barrier varactor frequency multiplier; field effect transistor; resonant tunneling; artificial molecule; terahertz; nanowire; Quantum dots;

   Sammanfattning : This thesis is based on three projects that deal with vertical III-V semiconductor devices. The work spans over basic research as well as more applied aspects of III-V semiconductor technology. All projects have in common that they rely on advanced epitaxial growth to form the starting material for device fabrication. LÄS MER

4. 23. MOVPE Growth and Characterization of Low-Dimensional III-V Semiconductor Structures

   Författare :Niclas Carlsson; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Semiconductory physics; low-dimensional structures; metalorganic vapour phase epitaxy; quantum wells; self-assembled dots; quantum dots; Fysicumarkivet A:1998:Carlsson; Halvledarfysik;

   Sammanfattning : Metalorganic vapour phase epitaxy is used for growth of low-dimensional III-V semiconductor structures. The roughness of heterointerfaces in GaAs/GaInP quantum well structures is studied by photoluminescence emission from extremely narrow quantum wells. LÄS MER

5. 24. Spectroscopic studies of III-V semiconductors in two, one and zero dimensions

   Författare :Dan Hessman; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; InAs-InP; low-dimensional structures; quantum wells; quantum dots; quantum wires; k.p calculations; type-II; photoluminescence; V grooves; Stranski Krastanow; single dot spectroscopy; GaAs-InP; III-V semiconductors; Fysicumarkivet A:1996:Hessman; InAs-GaAs; GaInAs-InP; Halvledarfysik; InP-GaInP; Semiconductory physics;

   Sammanfattning : In this thesis, spectroscopic studies of quantum wells (QWs), quantum wires (QWRs) and quantum dots (QDs) in III-V semiconductors are presented. The electronic structure of these low-dimensional structures have been studied by absorption, photocurrent, electroreflectance, photoluminescence (PL), and photoluminescence excitation (PLE) spectroscopy. LÄS MER

7. 25. Scanning Tunneling Microscopy Induced Luminescence Studies of Semiconductor Nanostructures

   Författare :Ulf Håkanson; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; transmission electron microscopy TEM ; III-V semiconductors; low-dimensional structures; nanostructures; single dot spectroscopy; Stranski-Krastanow; quantum dot QD ; Semiconductory physics; polarization; ordering; InP; GaInP; photon mapping; scanning tunneling microscopy STM ; scanning tunneling luminescence STL ; Halvledarfysik; Fysicumarkivet A:2003:Håkanson;

   Sammanfattning : This thesis treats scanning tunneling luminescence (STL) investigations of semiconductor nanostructures. The STL technique combines scanning tunneling microscopy (STM) with detection of photons, induced by the tunneling electrons. The high spatial resolution in STM and the local excitation allow for optical investigations on the nanometer-scale. LÄS MER