Sökning: "NATURVETENSKAP Fysik Kondenserade materiens fysik Halvledarfysik"
Visar resultat 11 - 15 av 44 avhandlingar innehållade orden NATURVETENSKAP Fysik Kondenserade materiens fysik Halvledarfysik.
11. Thermoelectric phenomena in low-dimensional semiconductor systems
Sammanfattning : This thesis investigates thermoelectric effects, predominantly in low-dimensional semiconductors. Various novel phenomena are predicted, investigated and discussed. LÄS MER
12. Optical spectroscopy of InGaAs quantum dots
Sammanfattning : The work presented in this thesis deals with optical studies of semiconductor quantum dots (QDs) in the InGaAs material system. It is shown that for self-assembled InAs QDs, the interaction with the surrounding GaAs barrier and the InAs wetting layer (WL) in particular, has a very large impact on their optical properties. LÄS MER
13. Near-infrared photodetectors based on Si/SiGe nanostructures
Sammanfattning : Two types of photodetectors containing Ge/Si quantum dots have been fabricated based on materials grown by molecular beam epitaxy and characterized with several experimental techniques. The aim was to study new device architectures with the implementation of Ge nanostructures, in order to obtain high detection efficiency in the near infrared range at room temperature. LÄS MER
14. First Principles Calculations of Electron Transport and Structural Damage by Intense Irradiation
Sammanfattning : First principle electronic structure theory is used to describe the effect of crystal binding on radiation detectors, electron transport properties, and structural damage induced by intense irradiation. A large database containing general electronic structure results to which data mining algorithms can be applied in the search for new functional materials, a case study is presented for scintillator detector materials. LÄS MER
15. Integration of epitaxial SiGe(C) layers in advanced CMOS devices
Sammanfattning : Heteroepitaxial SiGe(C) layers have attracted immense attention as a material for performance boost in state of the art electronic devices during recent years. Alloying silicon with germanium and carbon add exclusive opportunities for strain and bandgap engineering. LÄS MER