Sökning: "NATURVETENSKAP Fysik Kondenserade materiens fysik Halvledarfysik"

Visar resultat 11 - 15 av 44 avhandlingar innehållade orden NATURVETENSKAP Fysik Kondenserade materiens fysik Halvledarfysik.

  1. 11. Thermoelectric phenomena in low-dimensional semiconductor systems

    Författare :Magnus Larsson; Matematisk fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; kvantmekanik; relativitet; gravitation; statistisk fysik; termodynamik; Semiconductory physics; Halvledarfysik; thermopower anomaly; thermoelectricity; thermionic couple; zone-folding; cool chip; ballistic; thermionic; Mathematical and general theoretical physics; Matematisk och allmän teoretisk fysik; thermodynamics; statistical physics; relativity; quantum mechanics; klassisk mekanik; classical mechanics;

    Sammanfattning : This thesis investigates thermoelectric effects, predominantly in low-dimensional semiconductors. Various novel phenomena are predicted, investigated and discussed. LÄS MER

  2. 12. Optical spectroscopy of InGaAs quantum dots

    Författare :Arvid Larsson; Per Olof Holtz; Artur Zrenner; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; quantum dot; semiconductor; optical properties; spin; transport; wetting layer; polarization; kvantprick; halvledare; optiska egenskaper; spin; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik; Materials science; Teknisk materialvetenskap; Condensed matter physics; Kondenserade materiens fysik; Semiconductor physics; Halvledarfysik;

    Sammanfattning : The work presented in this thesis deals with optical studies of semiconductor quantum dots (QDs) in the InGaAs material system. It is shown that for self-assembled InAs QDs, the interaction with the surrounding GaAs barrier and the InAs wetting layer (WL) in particular, has a very large impact on their optical properties. LÄS MER

  3. 13. Near-infrared photodetectors based on Si/SiGe nanostructures

    Författare :Anders Elfving; Wei-Xin Ni; Thomas P. Pearsall; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; SiGe; Ge dots; nanostructures; molecular beam epitaxy; photodetector; Semiconductor physics; Halvledarfysik;

    Sammanfattning : Two types of photodetectors containing Ge/Si quantum dots have been fabricated based on materials grown by molecular beam epitaxy and characterized with several experimental techniques. The aim was to study new device architectures with the implementation of Ge nanostructures, in order to obtain high detection efficiency in the near infrared range at room temperature. LÄS MER

  4. 14. First Principles Calculations of Electron Transport and Structural Damage by Intense Irradiation

    Författare :Carlos Ortiz; Olle Eriksson; Mattias Klintenberg; Richard A. London; Uppsala universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; Condense matter theory; electronic structure; quasiparticles; GW theory; molecular dynamics; Boltzmann transport; electron transport; impact ionization; structural damage; dielectric response; structural biology; radiation detectors; scintillators; positron emission tommography; Electronic structure; Elektronstruktur; Semiconductor physics; Halvledarfysik; Biological physics; Biologisk fysik; Critical phenomena phase transitions ; Kritiska fenomen fasövergångar ; Functional materials; Funktionella material; Materiefysik; Physics of Matter;

    Sammanfattning : First principle electronic structure theory is used to describe the effect of crystal binding on radiation detectors, electron transport properties, and structural damage induced by intense irradiation. A large database containing general electronic structure results to which data mining algorithms can be applied in the search for new functional materials, a case study is presented for scintillator detector materials. LÄS MER

  5. 15. Integration of epitaxial SiGe(C) layers in advanced CMOS devices

    Författare :Julius Hållstedt; Henry Radamson; Eugene A. Fitzgerald; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Silicon Germanium Carbon SiGeC ; Chemical Vapor Deposition CVD ; Epitaxy; Pattern Dependency; MOSFET; Mobility; Spacer Gate Technology; Semiconductor physics; Halvledarfysik;

    Sammanfattning : Heteroepitaxial SiGe(C) layers have attracted immense attention as a material for performance boost in state of the art electronic devices during recent years. Alloying silicon with germanium and carbon add exclusive opportunities for strain and bandgap engineering. LÄS MER