Sökning: "Metal-Oxide Interface"
Visar resultat 1 - 5 av 64 avhandlingar innehållade orden Metal-Oxide Interface.
1. Polyethylene – metal oxide particle nanocomposites for future HVDC cable insulation : From interface tailoring to designed performance
Sammanfattning : Low-density polyethylene (LDPE) nanocomposites containing metal oxide nanoparticles are considered as promising candidates for insulating materials in future high-voltage direct-current (HVDC) cables. The significant improvement in dielectric properties compared with unfilled polymer is attributed to the large and active interface between the nanoparticles and the polymer. LÄS MER
2. Nanostructured Metal Oxide Semiconductors for Functional Applications
Sammanfattning : This thesis is about nanostructured metal oxides, their properties, and some of their applications. Semiconducting metal oxides like TiO2, ZnO,and SnO2 have a wide band gap, which means they absorb UV light andgenerate electron-hole pairs. LÄS MER
3. Detection and removal of traps at the SiO2/SiC interface
Sammanfattning : The interface between silicon dioxide (SiO2) and silicon carbide (SiC) is at the heart of the SiC metal-oxide-semiconductor field-effect (MOSFET) transistor. The technology to produce a high quality SiO2/SiC interface does not exist today, hampering further development of the SiC MOSFET. LÄS MER
4. Surface and Interface Studies of ZnO using Reactive Dynamics Simulation
Sammanfattning : About 90% of all chemicals are produced with the help of catalysts, substances with the ability to accelerate reactions without being consumed. Metal oxides play a prominent role in catalysis, since they are able to act reversibly in many chemical processes. Zink oxide (ZnO) is used to catalyse a number of industrially important reactions. LÄS MER
5. Ultrathin Oxides in Metal-Oxide-Silicon Structures: Defects and Characterization
Sammanfattning : The properties of metal-oxide-silicon (MOS) structures with ultrathin oxide layers (15-30 Å) have been investigated by means of electrical characterization. The characterization methods used were mainly capacitance voltage (C-V), current voltage (I-V) and constant voltage stress (I-t) measurements. LÄS MER