Sökning: "Materialfysik med ytfysik"

Visar resultat 16 - 20 av 30 avhandlingar innehållade orden Materialfysik med ytfysik.

  1. 16. Growth and characterization of SiC and GaN

    Författare :Rafal Ciechonski; Erik Janzén; Sebastian Lourdudoss; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiC; GaN; Deep level transient spectroscopy; Minority Carrier Transient Spectroscopy; Hall effect; Cathodoluminescence; Scanning electron microscopy; Atomic Force microscopy; sublimation growth; MOCVD; heterostructures; High Electron Mobility transistor; point defects; Material physics with surface physics; Materialfysik med ytfysik;

    Sammanfattning : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. LÄS MER

  3. 17. Growth and Characterization of Ti-Si-N Hard Coatings

    Författare :Axel Flink; Lars Hultman; Johanna Rosén; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Ti-Si-N; physical vapor deposition; nitrides; density functional theory; transmission electron microscopy; nanocomposits; nanolaminates; solid solutions; Material physics with surface physics; Materialfysik med ytfysik;

    Sammanfattning : Metastable (Ti,Si)N alloy and TiN/SiNx multilayer thin solid films as well as SiNx/TiN surfaces have been explored. Cubic Ti1-xSixN (0≤x≤0. LÄS MER

  4. 18. CVD Growth of Silicon Carbide for High Frequency Applications

    Författare :Urban Forsberg; Erik Janzén; Anne Henry; Christian Brylinski; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Material physics with surface physics; Materialfysik med ytfysik;

    Sammanfattning : Silicon Carbide (SiC) is an important wide band gap semiconductor with outstanding electronic properties. With figures of merit far better than silicon, SiC is believed to replace and outcompete silicon in many applications using high frequencies, high voltage and high temperatures. LÄS MER

  5. 19. Growth Dynamics of Semiconductor Nanostructures by MOCVD

    Författare :Kai Fu; Ying Fu; Lars-Erik Wernersson; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Growth dynamics; Monte Carlo; semiconductor quantum dot; Material physics with surface physics; Materialfysik med ytfysik;

    Sammanfattning : Semiconductors and related low-dimensional nanostructures are extremely important in the modern world. They have been extensively studied and applied in industry/military areas such as ultraviolet optoelectronics, light emitting diodes, quantum-dot photodetectors and lasers. LÄS MER

  7. 20. Experiments and Theoretical Modeling of Fullerene-like CNx and CPx Thin Film Structures

    Författare :Andrej Furlan; Lars Hultman; Ulf Jansson; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Material physics with surface physics; Materialfysik med ytfysik;

    Sammanfattning : This thesis concerns the materials science of carbon-based fullerene-like structures as a basis for the improvement of the applicability of FL-CNx protective thin films. In particular, structural origins of mechanical properties of FL-CNx coatings and water adsorption on their surface were investigated, both of which are critical parameters for their application as, e. LÄS MER